Browsing Faculty of Arts and Sciences by Keyword "elemental semiconductors"
Now showing items 1-6 of 6
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High Performance Atomic-Layer-Deposited \(LaLuO_3/Ge\)-on-Insulator p-Channel Metal-Oxide-Semiconductor Field-Effect Transistor with Thermally Grown \(GeO_2\) as Interfacial Passivation Layer
(American Institute of Physics, 2010)Enhancement-mode p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) on germanium-on-insulator substrate is fabricated with atomic-layer-deposited (ALD) \(LaLuO_3\) as gate dielectric. Significant improvement ... -
Liquid-metal-mediated homoepitaxial film growth of Ge at low temperature
(AIP Publishing, 1991)We demonstrate liquid‐metal‐mediatedhomoepitaxialcrystal growth of Ge on Ge(111) at temperatures in the range of 400–450 °C. Crystal growth proceeds by diffusion of Ge through a liquid layer, followed by precipitation onto ... -
Modeling RHEED Intensity Oscillations in Multilayer Epitaxy: Determination of the Ehrlich-Schwoebel Barrier in Ge(001) Homoepitaxy
(American Physical Society, 2007)We report the study of submonolayer growth of Ge(001) homoepitaxy by molecular beam epitaxy at low temperatures, 100–150 °C, using reflection high energy electron diffraction (RHEED) intensity oscillations obtained for a ... -
Thermal Activation and Saturation of Ion Beam Sculpting
(American Institute of Physics, 2011)We report a material-dependent critical temperature for ion beam sculpting of nanopores in amorphous materials under keV ion irradiation. At temperatures below the critical temperature, irradiated pores open at a rate that ... -
Three-stage lattice relaxation of Ge islands on Si(111) measured by tunneling microscopy
(AIP Publishing, 1995)We use the tunneling microscope to measure the surface lattice spacing of Ge islands grown on Si(111) as a function of their height. It changes in three stages: (I) (0–50 layers tall) Rapid relaxation from near the bulk ... -
Transition-State Model for Entropy-Limited Freezing
(Materials Research Society, 1987)A brief review is given of transition-state theory, both for the case of unimolecular reactions in the gas phase, and for reactions in condensed phases. An argument is made that, within the context of this theory, heterogeneous ...