Browsing Faculty of Arts and Sciences by Keyword "hole mobility"
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High Performance Atomic-Layer-Deposited \(LaLuO_3/Ge\)-on-Insulator p-Channel Metal-Oxide-Semiconductor Field-Effect Transistor with Thermally Grown \(GeO_2\) as Interfacial Passivation Layer
(American Institute of Physics, 2010)Enhancement-mode p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) on germanium-on-insulator substrate is fabricated with atomic-layer-deposited (ALD) \(LaLuO_3\) as gate dielectric. Significant improvement ...