III-V 4D Transistors

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III-V 4D Transistors

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Title: III-V 4D Transistors
Author: Gu, J.J.; Wang, Xinwei; Shao, J.; Neal, A.T.; Gordon, Roy Gerald; Manfra, M.J.; Ye, P.D.

Note: Order does not necessarily reflect citation order of authors.

Citation: Gu, J. J., X. W. Wang, J. Shao, A.T. Neal, M. J. Manfra, R. G. Gordon, and P. D. Ye. 2012. III-V 4D Transistors. In Proceedings of the 70th Annual Device Research Conference (DRC 2012), June 18-20, 2012, University Park, Pennsylvania. Piscataway: Ieee Press Books.
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Abstract: We fabricated for the first time vertically and laterally integrated III-V 4D transistors. III-V gate-all-around (GAA) nanowire MOSFETs with \(3×4\) arrays show high drive current of \(1.35mA/ \mu m\) and high transconductance of \(0.85mS/ \mu m\). The vertical stacking of the III-V nanowires have provided an elegant solution to the drivability bottleneck of nanowire devices and is promising for future low-power logic and RF application.
Published Version: doi:10.1109/DRC.2012.6256964
Terms of Use: This article is made available under the terms and conditions applicable to Open Access Policy Articles, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#OAP
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:10021409

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  • FAS Scholarly Articles [7106]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University
 
 

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