Antimony-doped Tin(II) Sulfide Thin Films

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Antimony-doped Tin(II) Sulfide Thin Films

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dc.contributor.author Chakraborty, Rupak
dc.contributor.author Kim, Sang Bok
dc.contributor.author Heald, Steven
dc.contributor.author Buonassisi, Tonio
dc.contributor.author Gordon, Roy Gerald
dc.contributor.author Sinsermsuksakul, Prasert
dc.date.accessioned 2012-12-07T21:52:56Z
dc.date.issued 2012-12-07
dc.identifier.citation Sinsermsuksakul, Prasert, Rupak Chakraborty, Sang Bok Kim, Steven M. Heald, Tonio Buonassisi, and Roy G. Gordon. Forthcoming. Antimony-doped tin(II) sulfide thin films. Chemistry of Materials. en_US
dc.identifier.issn 0897-4756 en_US
dc.identifier.uri http://nrs.harvard.edu/urn-3:HUL.InstRepos:10021411
dc.description.abstract Thin-film solar cells made from earth-abundant, inexpensive, and nontoxic materials are needed to replace the current technologies whose widespread use is limited by their use of scarce, costly, and toxic elements. Tin monosulfide (SnS) is a promising candidate for making absorber layers in scalable, inexpensive, and nontoxic solar cells. SnS has always been observed to be a p-type semiconductor. Doping SnS to form an n-type semiconductor would permit the construction of solar cells with p-n homojunctions. This paper reports doping SnS films with antimony, a potential n-type dopant. Small amounts of antimony \((\sim 1%)\) were found to greatly increase the electrical resistance of the SnS. The resulting intrinsic SnS(Sb) films could be used for the insulating layer in a p-i-n design for solar cells. Higher concentrations \((\sim 5%)\) of antimony did not convert the SnS(Sb) to low-resistivity n-type conductivity, but instead the films retain such a high resistance that the conductivity type could not be determined. Extended X-ray absorption fine structure analysis reveals that the highly doped films contain precipitates of a secondary phase that has chemical bonds characteristic of metallic antimony, rather than the antimony–sulfur bonds found in films with lower concentrations of antimony. en_US
dc.description.sponsorship Chemistry and Chemical Biology en_US
dc.language.iso en_US en_US
dc.publisher American Chemical Society en_US
dc.relation.isversionof doi:10.1021/cm3024988 en_US
dash.license OAP
dc.subject thin films en_US
dc.subject doping en_US
dc.subject semiconductor en_US
dc.subject tin sulfide en_US
dc.subject antimony en_US
dc.title Antimony-doped Tin(II) Sulfide Thin Films en_US
dc.type Journal Article en_US
dc.description.version Accepted Manuscript en_US
dc.relation.journal Chemistry of Materials en_US
dash.depositing.author Gordon, Roy Gerald
dc.date.available 2012-12-07T21:52:56Z

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  • FAS Scholarly Articles [7374]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University

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