dc.contributor.author | Sinsermsuksakul, Prasert | |
dc.contributor.author | Chakraborty, Rupak | |
dc.contributor.author | Kim, Sang Bok | |
dc.contributor.author | Heald, Steven | |
dc.contributor.author | Buonassisi, Tonio | |
dc.contributor.author | Gordon, Roy Gerald | |
dc.date.accessioned | 2012-12-07T21:52:56Z | |
dc.date.issued | 2012-12-07 | |
dc.identifier.citation | Sinsermsuksakul, Prasert, Rupak Chakraborty, Sang Bok Kim, Steven M. Heald, Tonio Buonassisi, and Roy G. Gordon. Forthcoming. Antimony-doped tin(II) sulfide thin films. Chemistry of Materials. | en_US |
dc.identifier.issn | 0897-4756 | en_US |
dc.identifier.uri | http://nrs.harvard.edu/urn-3:HUL.InstRepos:10021411 | |
dc.description.abstract | Thin-film solar cells made from earth-abundant, inexpensive, and nontoxic materials are needed to replace the current technologies whose widespread use is limited by their use of scarce, costly, and toxic elements. Tin monosulfide (SnS) is a promising candidate for making absorber layers in scalable, inexpensive, and nontoxic solar cells. SnS has always been observed to be a p-type semiconductor. Doping SnS to form an n-type semiconductor would permit the construction of solar cells with p-n homojunctions. This paper reports doping SnS films with antimony, a potential n-type dopant. Small amounts of antimony \((\sim 1%)\) were found to greatly increase the electrical resistance of the SnS. The resulting intrinsic SnS(Sb) films could be used for the insulating layer in a p-i-n design for solar cells. Higher concentrations \((\sim 5%)\) of antimony did not convert the SnS(Sb) to low-resistivity n-type conductivity, but instead the films retain such a high resistance that the conductivity type could not be determined. Extended X-ray absorption fine structure analysis reveals that the highly doped films contain precipitates of a secondary phase that has chemical bonds characteristic of metallic antimony, rather than the antimony–sulfur bonds found in films with lower concentrations of antimony. | en_US |
dc.description.sponsorship | Chemistry and Chemical Biology | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | American Chemical Society | en_US |
dc.relation.isversionof | doi:10.1021/cm3024988 | en_US |
dash.license | OAP | |
dc.subject | thin films | en_US |
dc.subject | doping | en_US |
dc.subject | semiconductor | en_US |
dc.subject | tin sulfide | en_US |
dc.subject | antimony | en_US |
dc.title | Antimony-doped Tin(II) Sulfide Thin Films | en_US |
dc.type | Journal Article | en_US |
dc.description.version | Accepted Manuscript | en_US |
dc.relation.journal | Chemistry of Materials | en_US |
dash.depositing.author | Gordon, Roy Gerald | |
dc.date.available | 2012-12-07T21:52:56Z | |
dc.identifier.doi | 10.1021/cm3024988 | * |
dash.contributor.affiliated | Sinsermsuksakul, Prasert | |
dash.contributor.affiliated | Kim, Sang Bok | |
dash.contributor.affiliated | Gordon, Roy | |