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dc.contributor.author	Chakraborty, Rupak
dc.contributor.author	Kim, Sang Bok
dc.contributor.author	Heald, Steven
dc.contributor.author	Buonassisi, Tonio
dc.contributor.author	Gordon, Roy Gerald
dc.contributor.author	Sinsermsuksakul, Prasert
dc.date.accessioned	2012-12-07T21:52:56Z
dc.date.issued	2012-12-07
dc.identifier.citation	Sinsermsuksakul, Prasert, Rupak Chakraborty, Sang Bok Kim, Steven M. Heald, Tonio Buonassisi, and Roy G. Gordon. Forthcoming. Antimony-doped tin(II) sulfide thin films. Chemistry of Materials.	en_US
dc.identifier.issn	0897-4756	en_US
dc.identifier.uri	http://nrs.harvard.edu/urn-3:HUL.InstRepos:10021411
dc.description.abstract	Thin-film solar cells made from earth-abundant, inexpensive, and nontoxic materials are needed to replace the current technologies whose widespread use is limited by their use of scarce, costly, and toxic elements. Tin monosulfide (SnS) is a promising candidate for making absorber layers in scalable, inexpensive, and nontoxic solar cells. SnS has always been observed to be a p-type semiconductor. Doping SnS to form an n-type semiconductor would permit the construction of solar cells with p-n homojunctions. This paper reports doping SnS films with antimony, a potential n-type dopant. Small amounts of antimony \((\sim 1%)\) were found to greatly increase the electrical resistance of the SnS. The resulting intrinsic SnS(Sb) films could be used for the insulating layer in a p-i-n design for solar cells. Higher concentrations \((\sim 5%)\) of antimony did not convert the SnS(Sb) to low-resistivity n-type conductivity, but instead the films retain such a high resistance that the conductivity type could not be determined. Extended X-ray absorption fine structure analysis reveals that the highly doped films contain precipitates of a secondary phase that has chemical bonds characteristic of metallic antimony, rather than the antimony–sulfur bonds found in films with lower concentrations of antimony.	en_US
dc.description.sponsorship	Chemistry and Chemical Biology	en_US
dc.language.iso	en_US	en_US
dc.publisher	American Chemical Society	en_US
dc.relation.isversionof	doi:10.1021/cm3024988	en_US
dash.license	OAP
dc.subject	thin films	en_US
dc.subject	doping	en_US
dc.subject	semiconductor	en_US
dc.subject	tin sulfide	en_US
dc.subject	antimony	en_US
dc.title	Antimony-doped Tin(II) Sulfide Thin Films	en_US
dc.type	Journal Article	en_US
dc.description.version	Accepted Manuscript	en_US
dc.relation.journal	Chemistry of Materials	en_US
dash.depositing.author	Gordon, Roy Gerald
dc.date.available	2012-12-07T21:52:56Z

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