Atomic Layer Deposition of \(Sc_2O_3\) for Passivating AlGaN/GaN High Electron Mobility Transistor Devices

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Atomic Layer Deposition of \(Sc_2O_3\) for Passivating AlGaN/GaN High Electron Mobility Transistor Devices

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Title: Atomic Layer Deposition of \(Sc_2O_3\) for Passivating AlGaN/GaN High Electron Mobility Transistor Devices
Author: Wang, Xinwei; Saadat, Omair I.; Xi, Bin; Lou, Xiabing; Molnar, Richard J.; Palacios, Tomás; Gordon, Roy Gerald

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Citation: Wang, Xinwei, Omair I. Saadat, Bin Xi, Xiabing Lou, Richard J. Molnar, Tomás Palacios, and Roy G. Gordon. 2012. Atomic layer deposition of \(Sc_2O_3\) for passivating AIGaN/GaN high electron mobility transistor devices. Applied Physics Letters 101: 232109.
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Abstract: Polycrystalline, partially epitaxial \(Sc_2O_3\) films were grown on AlGaN/GaN substrates by atomic layer deposition (ALD). With this ALD \(Sc_2O_3\) film as the insulator layer, the \(Sc_2O_3\)/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors showed excellent electrical performance with a high I\(_{on}\)/I\(_{off}\) ratio of over 10\(^8\) and a low subthreshold slope of 75 mV/dec. The UV/NH\(_4\)OH surface treatment on AlGaN/GaN prior to ALD was found to be critical for achieving these excellent figures. In addition, the \(Sc_2O_3\)dielectric is found to be negatively charged, which facilitates the enhancement-mode operation. While bare \(Sc_2O_3\) suffers from moisture degradation, depositing a moisture blocking layer of ALD \(Al_2O_3\) can effectively eliminate this effect.
Published Version: doi:10.1063/1.477071
Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:10055799

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  • FAS Scholarly Articles [7262]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University
 
 

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