# Smooth, Low-Resistance, Pinhole-free, Conformal Ruthenium Films by Pulsed Chemical Vapor Deposition

 Title: Smooth, Low-Resistance, Pinhole-free, Conformal Ruthenium Films by Pulsed Chemical Vapor Deposition Author: Wang, Xinwei; Gordon, Roy Gerald Note: Order does not necessarily reflect citation order of authors. Citation: Wang, Xinwei, and Roy G. Gordon. 2013. Smooth, low-resistance, pinhole-free, conformal ruthenium films by pulsed chemical vapor deposition. ECS Journal of Solid State Science and Technology 2(3): N41–N44. Full Text & Related Files: Ruthenium-ECS-12-20-2012-DASH.pdf (815.0Kb; PDF) Abstract: Ruthenium (Ru) thin films were deposited by pulsed chemical vapor deposition with precursors bis(N,N′-di-tert-butylacetamidinato)ruthenium(II)dicarbonyl, ammonia and hydrogen. Low-resistance polycrystalline Ru films with bulk density were obtained. Good adhesion to $$SiO_2$$ substrates was achieved by introducing a thin layer of WN in between the Ru and the $$SiO_2$$. Ru films only $$\sim 2$$ nm thick fully covered the WN layer without any pinholes. Deposition of Ru inside narrow holes showed that good conformality was obtained by lowering the deposition temperature. The film surface was smooth, and the rms roughness value did not increase too much after rapid thermal annealing at 700°C. Published Version: doi:10.1149/2.003303jss Terms of Use: This article is made available under the terms and conditions applicable to Open Access Policy Articles, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#OAP Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:10121957

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Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University