Quantum Hall Effect, Screening, and Layer-Polarized Insulating States in Twisted Bilayer Graphene
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Sanchez-Yamagishi, Javier D.
Watanabe, Kenji
Taniguchi, Takashi
Jarillo-Herrero, Pablo
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https://doi.org/10.1103/physrevlett.108.076601Metadata
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Sanchez-Yamagishi, Javier D., Thiti Taychatanapat, Kenji Watanabe, Takashi Taniguchi, Amir Yacoby, and Pablo Jarillo-Herrero. 2012. “Quantum Hall Effect, Screening, and Layer-Polarized Insulating States in Twisted Bilayer Graphene.” Physical Review Letters 108 (7) (February). Portico.Abstract
We investigate electronic transport in dual-gated twisted-bilayer graphene. Despite the subnanometer proximity between the layers, we identify independent contributions to the magnetoresistance from the graphene Landau level spectrum of each layer. We demonstrate that the filling factor of each layer can be independently controlled via the dual gates, which we use to induce Landau level crossings between the layers. By analyzing the gate dependence of the Landau level crossings, we characterize the finite interlayer screening and extract the capacitance between the atomically spaced layers. At zero filling factor, we observe an insulating state at large displacement fields, which can be explained by the presence of counterpropagating edge states with interlayer coupling.Other Sources
http://arxiv.org/pdf/1110.4628v1.pdfTerms of Use
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