Now showing items 1-9 of 9

    • Atomic Layer Deposition of \(Sc_2O_3\) for Passivating AlGaN/GaN High Electron Mobility Transistor Devices 

      Wang, Xinwei; Saadat, Omair I.; Xi, Bin; Lou, Xiabing; Molnar, Richard J.; Palacios, Tomás; Gordon, Roy Gerald (American Institute of Physics, 2012)
      Polycrystalline, partially epitaxial \(Sc_2O_3\) films were grown on AlGaN/GaN substrates by atomic layer deposition (ALD). With this ALD \(Sc_2O_3\) film as the insulator layer, the \(Sc_2O_3\)/AlGaN/GaN metal-insulator- ...
    • Controlled Tuning of Whispering Gallery Modes of GaN/InGaN Microdisk Cavities 

      Aharonovich, Igor; Niu, Nan; Rol, Fabian; Russell, Kasey Joe; Woolf, Alexander J; El-Ella, Haitham A.R.; Kappers, Menno J.; Hu, Evelyn (American Institute of Physics, 2011)
      Controlled tuning of the whispering gallery modes of GaN/InGaN microdisk cavities is demonstrated. The whispering gallery mode (WGM) tuning is achieved at room temperature by immersing the microdisks in water and irradiating ...
    • Dislocation Density-Dependent Quality Factors in InGaN Quantum Dot Containing Microdisks 

      El-Ella, H.A.R.; Rol, F; Kappers, M.J.; Russell, Kasey Joe; Hu, Evelyn; Oliver, R.A. (American Institute of Physics, 2011)
      Microdisks incorporating InGaN quantum dots were fabricated using SiO2 microspheres as a hard mask in conjunction with a photoelectrochemical etch step from a structure containing a sacrificial InGaN/InGaN superlattice. ...
    • Dual-wavelength laser annealing 

      Auston, D. H.; Golovchenko, Jene Andrew; Venkatesan, T. N. C. (AIP Publishing, 1979)
      A simple and efficient method of annealing ion‐implantation damage in semiconductors is demonstrated which utilizes a relatively weak optical pulse in the visible to initiate surface melting in combination with a more ...
    • Effects of Forming Gas Anneal on Ultrathin InGaAs Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors 

      Si, Mengwei; Gu, Jiangjiang J.; Wang, Xinwei; Shao, Jiayi; Li, Xuefei; Manfra, Michael J.; Gordon, Roy Gerald; Ye, Peide D. (American Institute of Physics, 2013)
      InGaAs gate-all-around metal-oxide-semiconductor field-effect transistors (MOSFETs) with 6 nm nanowire thickness have been experimentally demonstrated at sub-80 nm channel length. The effects of forming gas anneal (FGA) ...
    • High Extraction Efficiency Light-emitting Diodes Based on Embedded Air-gap Photonic-crystals 

      Matioli, Elison; Rangel, Elizabeth; Iza, Micheal; Fleury, Blaise; Pfaff, Nathan; Speck, James; Hu, Evelyn; Weisbuch, Claude (American Institute of Physics, 2010)
      This letter reports on high extraction efficiency light-emitting diodes (LEDs) based on embedded two-dimensional air-gap photonic crystals (PhCs). High refractive index contrast provided by the air gaps along with high ...
    • III-V 4D Transistors 

      Gu, J.J.; Wang, Xinwei; Shao, J.; Neal, A.T.; Manfra, M.J.; Gordon, Roy Gerald; Ye, P.D. (Institute of Electrical and Electronics Engineers, 2012)
      We fabricated for the first time vertically and laterally integrated III-V 4D transistors. III-V gate-all-around (GAA) nanowire MOSFETs with \(3×4\) arrays show high drive current of \(1.35mA/ \mu m\) and high transconductance ...
    • Measurement of Extraction and Absorption Parameters in GaN-based Photonic-crystal Light-emitting Diodes 

      Matioli, Elison; Fleury, Blaise; Rangel, Elizabeth; Hu, Evelyn; Speck, James; Weisbuch, Claude (American Institute of Physics, 2010)
      The light extraction efficiency of photonic-crystal (PhC) light-emitting diodes (LEDs) relies on the competition between the PhC extraction and dissipation mechanisms of the guided light within the LED. This work presents ...
    • Study of surface crystallinity and stoichiometry of laser annealed GaAs using time resolved reflectivity and channeling 

      Venkatesan, T. N. C.; Auston, D. H.; Golovchenko, Jene Andrew; Surko, C. M. (American Institute of Physics, 1979)
      The surface crystallinity ans stoichiometry of tellurium implanted GaAs annealed with a frequency doubled Nd glass laser using time resolved reflectivity and channeling measurements has been studied. By optimizing the ...