Browsing FAS Scholarly Articles by Keyword "III-V semiconductors"
Now showing items 1-9 of 9
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Atomic Layer Deposition of \(Sc_2O_3\) for Passivating AlGaN/GaN High Electron Mobility Transistor Devices
(American Institute of Physics, 2012)Polycrystalline, partially epitaxial \(Sc_2O_3\) films were grown on AlGaN/GaN substrates by atomic layer deposition (ALD). With this ALD \(Sc_2O_3\) film as the insulator layer, the \(Sc_2O_3\)/AlGaN/GaN metal-insulator- ... -
Controlled Tuning of Whispering Gallery Modes of GaN/InGaN Microdisk Cavities
(American Institute of Physics, 2011)Controlled tuning of the whispering gallery modes of GaN/InGaN microdisk cavities is demonstrated. The whispering gallery mode (WGM) tuning is achieved at room temperature by immersing the microdisks in water and irradiating ... -
Dislocation Density-Dependent Quality Factors in InGaN Quantum Dot Containing Microdisks
(American Institute of Physics, 2011)Microdisks incorporating InGaN quantum dots were fabricated using SiO2 microspheres as a hard mask in conjunction with a photoelectrochemical etch step from a structure containing a sacrificial InGaN/InGaN superlattice. ... -
Dual-wavelength laser annealing
(AIP Publishing, 1979)A simple and efficient method of annealing ion‐implantation damage in semiconductors is demonstrated which utilizes a relatively weak optical pulse in the visible to initiate surface melting in combination with a more ... -
Effects of Forming Gas Anneal on Ultrathin InGaAs Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors
(American Institute of Physics, 2013)InGaAs gate-all-around metal-oxide-semiconductor field-effect transistors (MOSFETs) with 6 nm nanowire thickness have been experimentally demonstrated at sub-80 nm channel length. The effects of forming gas anneal (FGA) ... -
High Extraction Efficiency Light-emitting Diodes Based on Embedded Air-gap Photonic-crystals
(American Institute of Physics, 2010)This letter reports on high extraction efficiency light-emitting diodes (LEDs) based on embedded two-dimensional air-gap photonic crystals (PhCs). High refractive index contrast provided by the air gaps along with high ... -
III-V 4D Transistors
(Institute of Electrical and Electronics Engineers, 2012)We fabricated for the first time vertically and laterally integrated III-V 4D transistors. III-V gate-all-around (GAA) nanowire MOSFETs with \(3×4\) arrays show high drive current of \(1.35mA/ \mu m\) and high transconductance ... -
Measurement of Extraction and Absorption Parameters in GaN-based Photonic-crystal Light-emitting Diodes
(American Institute of Physics, 2010)The light extraction efficiency of photonic-crystal (PhC) light-emitting diodes (LEDs) relies on the competition between the PhC extraction and dissipation mechanisms of the guided light within the LED. This work presents ... -
Study of surface crystallinity and stoichiometry of laser annealed GaAs using time resolved reflectivity and channeling
(American Institute of Physics, 1979)The surface crystallinity ans stoichiometry of tellurium implanted GaAs annealed with a frequency doubled Nd glass laser using time resolved reflectivity and channeling measurements has been studied. By optimizing the ...