Browsing FAS Scholarly Articles by Keyword "alumina"
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Effects of Forming Gas Anneal on Ultrathin InGaAs Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors
(American Institute of Physics, 2013)InGaAs gate-all-around metal-oxide-semiconductor field-effect transistors (MOSFETs) with 6 nm nanowire thickness have been experimentally demonstrated at sub-80 nm channel length. The effects of forming gas anneal (FGA) ...