Browsing FAS Scholarly Articles by Keyword "charge transport"
Now showing items 1-9 of 9
-
Charge Transport Across Insulating Self-Assembled Monolayers: Non-equilibrium Approaches and Modeling To Relate Current and Molecular Structure
(American Chemical Society (ACS), 2014)This paper examines charge transport by tunneling across a series of electrically insulating molecules with the structure HS(CH2)4CONH(CH2)2R) in the form of self-assembled monolayers (SAMs), supported on silver. The ... -
Charge Transport and Rectification in Arrays of SAM-Based Tunneling Junctions
(American Chemical Society, 2010)This paper describes a method of fabrication that generates small arrays of tunneling junctions based on self-assembled monolayers (SAMs); these junctions have liquid-metal top-electrodes stabilized in microchannels and ... -
Comparison of SAM-Based Junctions with Ga2O3/EGaIn Top Electrodes to Other Large-Area Tunneling Junctions
(American Chemical Society, 2012)This paper compares the J(V) characteristics obtained for self-assembled monolayer (SAM)-based tunneling junctions with top electrodes of the liquid eutectic of gallium and indium (EGaIn) fabricated using two different ... -
Influence of Environment on the Measurement of Rates of Charge Transport across Ag TS /SAM//Ga 2 O 3 /EGaIn Junctions
(American Chemical Society (ACS), 2014)This paper investigates the influence of the atmosphere used in the fabrication of top electrodes from the liquid eutectic of gallium and indium (EGaIn) (the so-called “EGaIn” electrodes), and in measurements of current ... -
Introducing Ionic and/or Hydrogen Bonds into the SAM//Ga 2 O 3 Top-Interface of Ag TS /S(CH 2 ) n T//Ga 2 O 3 /EGaIn Junctions
(American Chemical Society (ACS), 2014)Junctions with the structure AgTS/S(CH2)nT//Ga2O3/EGaIn (where S(CH2)nT is a self-assembled monolayer, SAM, of n-alkanethiolate bearing a terminal functional group T) make it possible to examine the response of rates of ... -
The Rate of Charge Tunneling through Self-Assembled Monolayers Is Insensitive to Many Functional Group Substitutions
(Wiley-VCH Verlag Berlin, 2012)Insensitivity: A series of molecules containing a common head group and body as well as structurally varied tail groups (-R) has been used in junctions with the structure Ag/S(CH2)4CONH(CH2)2R//Ga2O3/EGaIn to study the ... -
Replacing \(Ag ^{TS} SCH_2-R\) with \(Ag^{TS}O_2C-R\) in EGaIn-Based Tunneling Junctions Does Not Significantly Change Rates of Charge Transport
(Wiley-Blackwell, 2014)This paper compares rates of charge transport by tunneling across junctions with the structures \(Ag^{TS}X(CH_2)_{2n}CH_3 //Ga_2O_3 /EGaIn \space\) (n=1–8 and \(X= -SCH_2-\) and \(O_2C-\)); here \(Ag^{TS}\) is template-stripped ... -
Replacing Ag TS SCH 2 -R with Ag TS O 2 C-R in EGaIn-Based Tunneling Junctions Does Not Significantly Change Rates of Charge Transport
(Wiley-Blackwell, 2014)This paper compares rates of charge transport by tunneling across junctions with the structures AgTSX(CH2)2nCH3 //Ga2O3 /EGaIn (n=1–8 and X= [BOND]SCH2[BOND] and [BOND]O2C[BOND]); here AgTS is template-stripped silver, and ... -
Tunneling across SAMs Containing Oligophenyl Groups
(American Chemical Society (ACS), 2016)This paper describes rates of charge tunneling across self-assembled monolayers (SAMs) of compounds containing oligophenyl groups, supported on gold and silver, using Ga2O3/EGaIn as the top electrode. It compares the ...