Now showing items 1-2 of 2

    • Dislocation Density-Dependent Quality Factors in InGaN Quantum Dot Containing Microdisks 

      El-Ella, H.A.R.; Rol, F; Kappers, M.J.; Russell, Kasey Joe; Hu, Evelyn; Oliver, R.A. (American Institute of Physics, 2011)
      Microdisks incorporating InGaN quantum dots were fabricated using SiO2 microspheres as a hard mask in conjunction with a photoelectrochemical etch step from a structure containing a sacrificial InGaN/InGaN superlattice. ...
    • Etching of Graphene Devices with a Helium Ion Beam 

      Lemme, Max C.; Bell, David C.; Williams, James R.; Stern, Lewis A.; Baugher, Britton W. H.; Jarillo-Herrero, Pablo; Marcus, Charles Masamed (American Chemical Society, 2009)
      We report on the etching of graphene devices with a helium ion beam, including in situ electrical measurement during lithography. The etching process can be used to nanostructure and electrically isolate different regions ...