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    • Pulsed Excimer (KrF) Laser Melting of Amorphous and Crystalline Silicon Layers 

      Narayan, J.; White, C.W.; Aziz, Michael; Stritzker, B.; Walthuis, A. (American Institute of Physics, 1985)
      We have investigated depth of melting as a function of pulse energy density in amorphous and crystalline silicon layers. The melting threshold for KrF laser pulses (lambda=0.249 µm, tau=24×10−9 s) in amorphous (7660-Å-thick) ...