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    • Atomic Layer Deposition of Lanthanum-Based Ternary Oxides 

      Wang, Hongtao; Wang, Jun-Jieh; Gordon, Roy Gerald; Lehn, Jean-Sébastien M.; Li, Huazhi; Hong, Daewon; Shenai, Deo V. (Electrochemical Society, 2009)
      Lanthanum-based ternary oxide \(La_xM_{2−x}O_3\) (M = Sc, Lu, or Y) films were deposited on HF-last Si substrates by atomic layer deposition. Both \(LaScO_3\) and \(LaLuO_3\) films are amorphous while the as-deposited ...