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    • III-V 4D Transistors 

      Gu, J.J.; Wang, Xinwei; Shao, J.; Neal, A.T.; Manfra, M.J.; Gordon, Roy Gerald; Ye, P.D. (Institute of Electrical and Electronics Engineers, 2012)
      We fabricated for the first time vertically and laterally integrated III-V 4D transistors. III-V gate-all-around (GAA) nanowire MOSFETs with \(3×4\) arrays show high drive current of \(1.35mA/ \mu m\) and high transconductance ...