Now showing items 1-3 of 3

    • Crystal Growth Kinetics of Boron Oxide Under Pressure 

      Aziz, Michael; Nygren, Eric; Hays, James F.; Turnbull, David (American Institute of Physics, 1985)
      We have measured the crystal growth rate u of B2O3-I in the amorphous phase, as it varied over five orders of magnitude with changes in temperature and pressure. We eliminated the crystal nucleation barrier by seeding the ...
    • Effect of deposition rate on morphology evolution of metal-on-insulator films grown by pulsed laser deposition 

      Warrender, Jeffrey M.; Aziz, Michael (American Physical Society, 2007)
      Ag films were grown by pulsed laser deposition on insulating SiO2 and mica substrates and exhibited a morphological progression beginning with nucleation of three-dimensional islands and culminating in a continuous, ...
    • Pulsed Excimer (KrF) Laser Melting of Amorphous and Crystalline Silicon Layers 

      Narayan, J.; White, C.W.; Aziz, Michael; Stritzker, B.; Walthuis, A. (American Institute of Physics, 1985)
      We have investigated depth of melting as a function of pulse energy density in amorphous and crystalline silicon layers. The melting threshold for KrF laser pulses (lambda=0.249 µm, tau=24×10−9 s) in amorphous (7660-Å-thick) ...