Transport in Two-Dimensional Disordered Semimetals
View/ Open
Published Version
https://doi.org/10.1103/PhysRevLett.113.186801Metadata
Show full item recordCitation
Knap, Michael, Jay D. Sau, Bertrand I. Halperin, and Eugene Demler. 2014. “Transport in Two-Dimensional Disordered Semimetals.” Physical Review Letters 113 (18) (October). doi:10.1103/physrevlett.113.186801.Abstract
We theoretically study transport in two-dimensional semimetals. Typically, electron and hole puddles emerge in the transport layer of these systems due to smooth fluctuations in the potential. We calculate the electric response of the electron-hole liquid subject to zero and finite perpendicular magnetic fields using an effective medium approximation and a complementary mapping on resistor networks. In the presence of smooth disorder and in the limit of a weak electron-hole recombination rate, we find for small but finite overlap of the electron and hole bands an abrupt upturn in resistivity when lowering the temperature but no divergence at zero temperature. We discuss how this behavior is relevant for several experimental realizations and introduce a simple physical explanation for this effect.Other Sources
http://arxiv.org/pdf/1405.0277v3.pdfTerms of Use
This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAACitable link to this page
http://nrs.harvard.edu/urn-3:HUL.InstRepos:22856735
Collections
- FAS Scholarly Articles [18292]
Contact administrator regarding this item (to report mistakes or request changes)