Pressure dependence of arsenic diffusivity in silicon
| Title: | Pressure dependence of arsenic diffusivity in silicon |
| Author: |
Hull, Robert; Jacobson, Dale C.; Poate, John M.; Turnbull, David; Aziz, Michael; Nygren, Eric
Note: Order does not necessarily reflect citation order of authors. |
| Citation: | Nygren, Eric, Michael J. Aziz, David Turnbull, John M. Poate, Dale C. Jacobson, and Robert Hull. 1985. Pressure dependence of arsenic diffusivity in silicon. Applied Physics Letters 47, no. 2: 105-107. |
| Access Status: | At the direction of the depositing author this work is not currently accessible through DASH. |
| Full Text & Related Files: |
Nygren Aziz Turnbull APL 1985.pdf (210.6Kb; PDF) 
|
| Abstract: | The diffusivity of implanted As in crystalline Si has been measured using Rutherford backscattering and channeling for specimens annealed at temperatures between 850 and 1000 °C under hydrostatic pressures up to 30 kbar. The diffusivity, at a given temperature, was found to increase with pressure with a maximum increase of a factor of 10. This diffusivity enhancement can be described by an average activation volume of −5.7±0.8 cm3/mole. The activation enthalpy ranges from an ambient value of 4.5 to 3.6 eV at 30 kbar. |
| Published Version: | http://dx.doi.org/10.1063/1.96283 |
| Citable link to this page: | http://nrs.harvard.edu/urn-3:HUL.InstRepos:2562071 |
This item appears in the following Collection(s)
-
FAS Scholarly Articles [5128]
Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University
Contact administrator regarding this item (to report mistakes or request changes)
