Pressure dependence of arsenic diffusivity in silicon

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Pressure dependence of arsenic diffusivity in silicon

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Title: Pressure dependence of arsenic diffusivity in silicon
Author: Hull, Robert; Jacobson, Dale C.; Poate, John M.; Turnbull, David; Aziz, Michael; Nygren, Eric

Note: Order does not necessarily reflect citation order of authors.

Citation: Nygren, Eric, Michael J. Aziz, David Turnbull, John M. Poate, Dale C. Jacobson, and Robert Hull. 1985. Pressure dependence of arsenic diffusivity in silicon. Applied Physics Letters 47, no. 2: 105-107.
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Abstract: The diffusivity of implanted As in crystalline Si has been measured using Rutherford backscattering and channeling for specimens annealed at temperatures between 850 and 1000 °C under hydrostatic pressures up to 30 kbar. The diffusivity, at a given temperature, was found to increase with pressure with a maximum increase of a factor of 10. This diffusivity enhancement can be described by an average activation volume of −5.7±0.8 cm3/mole. The activation enthalpy ranges from an ambient value of 4.5 to 3.6 eV at 30 kbar.
Published Version: http://dx.doi.org/10.1063/1.96283
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:2562071

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  • FAS Scholarly Articles [7078]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University
 
 

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