| dc.contributor.author | Nygren, Eric | |
| dc.contributor.author | Aziz, Michael | |
| dc.contributor.author | Turnbull, David | |
| dc.contributor.author | Poate, John M. | |
| dc.contributor.author | Jacobson, Dale C. | |
| dc.contributor.author | Hull, Robert | |
| dc.date.accessioned | 2009-02-05T19:02:56Z | |
| dc.date.issued | 1985 | |
| dc.identifier.citation | Nygren, Eric, Michael J. Aziz, David Turnbull, John M. Poate, Dale C. Jacobson, and Robert Hull. 1985. Pressure dependence of arsenic diffusivity in silicon. Applied Physics Letters 47, no. 2: 105-107. | en |
| dc.identifier.issn | 0003-6951 | en |
| dc.identifier.uri | http://nrs.harvard.edu/urn-3:HUL.InstRepos:2562071 | |
| dc.description.abstract | The diffusivity of implanted As in crystalline Si has been measured using Rutherford backscattering and channeling for specimens annealed at temperatures between 850 and 1000 °C under hydrostatic pressures up to 30 kbar. The diffusivity, at a given temperature, was found to increase with pressure with a maximum increase of a factor of 10. This diffusivity enhancement can be described by an average activation volume of −5.7±0.8 cm3/mole. The activation enthalpy ranges from an ambient value of 4.5 to 3.6 eV at 30 kbar. | en |
| dc.description.sponsorship | Engineering and Applied Sciences | en |
| dc.publisher | American Institute of Physics | en |
| dc.relation.isversionof | http://dx.doi.org/10.1063/1.96283 | en |
| dash.license | META_ONLY | |
| dc.title | Pressure dependence of arsenic diffusivity in silicon | en |
| dc.relation.journal | Applied Physics Letters | en |
| dash.depositing.author | Aziz, Michael | |
| dash.embargo.until | 10000-01-01 | |
| dc.identifier.doi | 10.1063/1.96283 | * |
| dash.contributor.affiliated | Aziz, Michael | |
