Carbon Nanotube-Based Nonvolatile Random Access Memory for Molecular Computing

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Carbon Nanotube-Based Nonvolatile Random Access Memory for Molecular Computing

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Title: Carbon Nanotube-Based Nonvolatile Random Access Memory for Molecular Computing
Author: Rueckes, Thomas; Cheung, Chin Li; Kim, Kyoungha; Joselevich, Ernesto; Tseng, Greg Y.; Lieber, Charles

Note: Order does not necessarily reflect citation order of authors.

Citation: Rueckes, Thomas, Kyoungha Kim, Ernesto Joselevich, Greg Y. Tseng, Chin-Li Cheung, and Charles M. Lieber. 2000. Science. 289(5476): 94-97.
Access Status: At the direction of the depositing author this work is not currently accessible through DASH.
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Abstract: A concept for molecular electronics exploiting carbon nanotubes as both molecular device elements and molecular wires for reading and writing information was developed. Each device element is based on a suspended, crossed nanotube geometry that leads to bistable, electrostatically switchable ON/OFF states. The device elements are naturally addressable in large arrays by the carbon nanotube molecular wires making up the devices. These reversible, bistable device elements could be used to construct nonvolatile random access memory and logic function tables at an integration level approaching 10 [to the 12th power] elements per square centimeter and an element operation frequency in excess of 100 gigahertz. The viability of this concept is demonstrated by detailed calculations and by the experimental realization of a reversible, bistable nanotube-based bit.
Published Version: http://dx.doi.org/10.1126/science.289.5476.94
Other Sources: http://digitalcommons.unl.edu/chemistrycheung/9/
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:2710485

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  • FAS Scholarly Articles [7470]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University
 
 

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