Activation Volume for Phosphorus Diffusion in Silicon and Si0.93Ge0.07
| Title: | Activation Volume for Phosphorus Diffusion in Silicon and Si0.93Ge0.07 |
| Author: |
Larsen, Arne Nylandsted; Zhao, Yuechao; Zangenberg, Nikolaj R.; Aziz, Michael
Note: Order does not necessarily reflect citation order of authors. |
| Citation: | Zhao, Yuechao, Michael J. Aziz, Nikolaj R. Zangenberg, and Arne Nylandsted Larsen. 2005. Activation Volume for phosphorus diffusion in silicon and Si0.93Ge0.07. Applied Physics Letters 86(14): 141902. |
| Access Status: | At the direction of the depositing author this work is not currently accessible through DASH. |
| Full Text & Related Files: |
Zhao_ActivationVolume.pdf (147.2Kb; PDF) 
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| Abstract: | The hydrostatic pressure dependence of the diffusivity of P in compressively strained Si0.93Ge0.07 and unalloyed Si has been measured. In both cases the diffusivity is almost independent of pressure, characterized by an activation volume V* of (+0.09±0.11) times the atomic volume Omega for the unalloyed Si, and (+0.01±0.06) Omega for Si0.93Ge0.07. The results are used in conjunction with the reported effect of biaxial strain on diffusion normal to the surface to test the prediction for an interstitialcy-based mechanism of Aziz's phenomenological thermodynamic treatment of diffusion under uniform nonhydrostatic stress states. The prediction agrees well with measured behavior, lending additional credence to the interstitial-based mechanism and supporting the nonhydrostatic thermodynamic treatment. |
| Published Version: | http://dx.doi.org/10.1063/1.1896445 |
| Citable link to this page: | http://nrs.harvard.edu/urn-3:HUL.InstRepos:2795321 |
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Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University
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