Activation Volume for Phosphorus Diffusion in Silicon and Si0.93Ge0.07

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Activation Volume for Phosphorus Diffusion in Silicon and Si0.93Ge0.07

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Title: Activation Volume for Phosphorus Diffusion in Silicon and Si0.93Ge0.07
Author: Larsen, Arne Nylandsted; Zhao, Yuechao; Zangenberg, Nikolaj R.; Aziz, Michael

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Citation: Zhao, Yuechao, Michael J. Aziz, Nikolaj R. Zangenberg, and Arne Nylandsted Larsen. 2005. Activation Volume for phosphorus diffusion in silicon and Si0.93Ge0.07. Applied Physics Letters 86(14): 141902.
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Abstract: The hydrostatic pressure dependence of the diffusivity of P in compressively strained Si0.93Ge0.07 and unalloyed Si has been measured. In both cases the diffusivity is almost independent of pressure, characterized by an activation volume V* of (+0.09±0.11) times the atomic volume Omega for the unalloyed Si, and (+0.01±0.06) Omega for Si0.93Ge0.07. The results are used in conjunction with the reported effect of biaxial strain on diffusion normal to the surface to test the prediction for an interstitialcy-based mechanism of Aziz's phenomenological thermodynamic treatment of diffusion under uniform nonhydrostatic stress states. The prediction agrees well with measured behavior, lending additional credence to the interstitial-based mechanism and supporting the nonhydrostatic thermodynamic treatment.
Published Version: http://dx.doi.org/10.1063/1.1896445
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:2795321

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  • FAS Scholarly Articles [7362]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University
 
 

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