Kinetic Modeling of Dopant and Impurity Surface Segregation During Vapor Phase Growth: Multiple Mechanism Approach
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Kinetic Modeling of Dopant and Impurity Surface Segregation During Vapor Phase Growth: Multiple Mechanism Approach
| Title: | Kinetic Modeling of Dopant and Impurity Surface Segregation During Vapor Phase Growth: Multiple Mechanism Approach |
| Author: |
Arnold, Craig B.; Aziz, Michael
Note: Order does not necessarily reflect citation order of authors. |
| Citation: | Arnold, Craig B. and Michael J. Aziz. 2003. Kinetic modeling of dopant and impurity surface segregation during vapor phase growth: Multiple mechanism approach. Materials Research Society Symposia Proceedings 749: W14.3.1-W14.3.7. |
| Full Text & Related Files: |
Arnold_KineticModelling.pdf (158.0Kb; PDF) 
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| Abstract: | We propose a new kinetic model for surface segregation during vapor phase growth that accounts for multiple segregation mechanisms, including mechanisms for terrace mediated exchange and step edge mediated exchange. The major result of the model is an analytic expression for the experimentally measured segregation length and profile broadening that can be readily calculated without the need for numerical simulations. We compare the model to experimental measurements for the temperature dependence of segregation of Sb in Si(001). The model is able to accurately describe both the anomalous segregation at low temperature and the transition between equilibrium and kinetically limited segregation at high temperature. An excellent agreement is obtained using realistic energies and pre-exponential factors for the kinetic rate constants. The model can be applied to other segregating systems in planar geometries, including metallic and III-V semiconducting thin films. |
| Published Version: | http://www.mrs.org/s_mrs/sec_subscribe.asp?CID=2572&DID=118880&action=detail |
| Other Sources: | www.seas.harvard.edu/matsci/people/aziz/publications/mja134.pdf |
| Terms of Use: | This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA |
| Citable link to this page: | http://nrs.harvard.edu/urn-3:HUL.InstRepos:2795432 |
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Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University
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