Kinetic Modeling of Dopant and Impurity Surface Segregation During Vapor Phase Growth: Multiple Mechanism Approach

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Kinetic Modeling of Dopant and Impurity Surface Segregation During Vapor Phase Growth: Multiple Mechanism Approach

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dc.contributor.author Arnold, Craig B.
dc.contributor.author Aziz, Michael
dc.date.accessioned 2009-04-14T20:27:48Z
dc.date.issued 2003
dc.identifier.citation Arnold, Craig B. and Michael J. Aziz. 2003. Kinetic modeling of dopant and impurity surface segregation during vapor phase growth: Multiple mechanism approach. Materials Research Society Symposia Proceedings 749: W14.3.1-W14.3.7. en
dc.identifier.issn 0272-9172 en
dc.identifier.uri http://nrs.harvard.edu/urn-3:HUL.InstRepos:2795432
dc.description.abstract We propose a new kinetic model for surface segregation during vapor phase growth that accounts for multiple segregation mechanisms, including mechanisms for terrace mediated exchange and step edge mediated exchange. The major result of the model is an analytic expression for the experimentally measured segregation length and profile broadening that can be readily calculated without the need for numerical simulations. We compare the model to experimental measurements for the temperature dependence of segregation of Sb in Si(001). The model is able to accurately describe both the anomalous segregation at low temperature and the transition between equilibrium and kinetically limited segregation at high temperature. An excellent agreement is obtained using realistic energies and pre-exponential factors for the kinetic rate constants. The model can be applied to other segregating systems in planar geometries, including metallic and III-V semiconducting thin films. en
dc.description.sponsorship Engineering and Applied Sciences en
dc.language.iso en_US en
dc.publisher Materials Research Society en
dc.relation.isversionof http://www.mrs.org/s_mrs/sec_subscribe.asp?CID=2572&DID=118880&action=detail en
dc.relation.hasversion www.seas.harvard.edu/matsci/people/aziz/publications/mja134.pdf en
dash.license LAA
dc.title Kinetic Modeling of Dopant and Impurity Surface Segregation During Vapor Phase Growth: Multiple Mechanism Approach en
dc.relation.journal Materials Research Society Symposia Proceedings en
dash.depositing.author Aziz, Michael

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  • FAS Scholarly Articles [7470]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University

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