Linear Stability and Instability Patterns in Ion-Sputtered Silicon

DSpace/Manakin Repository

Linear Stability and Instability Patterns in Ion-Sputtered Silicon

Citable link to this page

. . . . . .

Title: Linear Stability and Instability Patterns in Ion-Sputtered Silicon
Author: George, H. Bola; Madi, Charbel S.; Aziz, Michael

Note: Order does not necessarily reflect citation order of authors.

Citation: Madi, Charbel S., H. Bola George, and Michael J. Aziz. Forthcoming. Linear stability and instability patterns in ion-sputtered silicon. Journal of Physics Condensed Matter.
Full Text & Related Files:
Abstract: We study the patterns formed on Ar+ ion sputtered Si surfaces at room temperature as a function of the control parameters ion energy and incidence angle. We observe the sensitivity of pattern formation to artifacts such as surface contamination and report the procedures we developed to control them. We identify regions in control parameters space where holes, parallel mode ripples and perpendicular mode ripples form, and identify a region where the flat surface is stable. In the vicinity of the boundaries between the stable and pattern forming regions, called bifurcations, we follow the time dependence from exponential amplification to saturation and examine the amplification rate and the wavelength in the exponential amplification regime. The resulting power laws are consistent with the theory of nonequilibrium pattern formation for a Type I (constant-wavelength) bifurcation at low angles and for a Type II (diverging wavelength) bifurcation at high angles. We discuss the failure of all sputter rippling models to adequately describe these aspects of the simplest experimental system studied, consisting of an elemental, isotropic amorphous surface in the simplest evolution regime of linear stabilty.
Published Version: http://www.iop.org/EJ/journal/JPhysCM
Terms of Use: This article is made available under the terms and conditions applicable to Open Access Policy Articles, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#OAP
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:2795733

Show full Dublin Core record

This item appears in the following Collection(s)

  • FAS Scholarly Articles [6464]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University
 
 

Search DASH


Advanced Search
 
 

Submitters