Composition dependence of Schottky Barrier Heights and Bandgap Energies of GaNxAs1−x Synthesized by Ion Implantation and Pulsed-Laser Melting

DSpace/Manakin Repository

Composition dependence of Schottky Barrier Heights and Bandgap Energies of GaNxAs1−x Synthesized by Ion Implantation and Pulsed-Laser Melting

Citable link to this page

. . . . . .

Title: Composition dependence of Schottky Barrier Heights and Bandgap Energies of GaNxAs1−x Synthesized by Ion Implantation and Pulsed-Laser Melting
Author: Kim, Taeseok; Aziz, Michael; Dubon, Oscar D.; Alberi, Kirstin; Narayanamurti, Venkatesh

Note: Order does not necessarily reflect citation order of authors.

Citation: Kim, Taeseok, Kirstin Alberi, Oscar D. Dubon, Michael J. Aziz, and Venkatesh Narayanamurti. 2008. Composition dependence of Schottky barrier heights and bandgap energies of GaNxAs1−x synthesized by ion implantation and pulsed-laser melting. Journal of Applied Physics 104 (11): 113722.
Access Status: At the direction of the depositing author this work is not currently accessible through DASH.
Full Text & Related Files:
Abstract: We present a systematic investigation on the band structure of the GaNxAs1−x alloys synthesized using nitrogen ion implantation followed by pulsed-laser melting and rapid thermal annealing. The evolution of the nitrogen-concentration depth profile is consistent with liquid-phase diffusion, solute trapping at the rapidly moving solidification front, and surface evaporation. The reduction of the Schottky barrier height of the T-like threshold at nitrogen composition up to x = 0.016 is studied by ballistic electron emission microscopy (BEEM) and determined quantitatively using the second voltage derivative BEEM spectra to be −191 +/- 63 meV per x = 0.01, which is close to the corresponding slope for samples grown by low-temperature molecular beam epitaxy. This slope is also consistent with the bandgap narrowing measured on the same samples by photomodulated reflectance and is consistent with the band anticrossing model for the splitting of the conduction band in the GaNxAs1−x alloys. Lithographically patterned GaNxAs1−x dots are imaged by BEEM. Analysis of BEEM spectra of the locally confined dots indicates an alloying-induced decrease in the Schottky barrier height of four times the thermal energy at room temperature.
Published Version: http://dx.doi.org/10.1063/1.3041154
Other Sources: http://www.seas.harvard.edu/matsci/people/aziz/publications/mja189.pdf
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:2795876

Show full Dublin Core record

This item appears in the following Collection(s)

  • FAS Scholarly Articles [7495]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University
 
 

Search DASH


Advanced Search
 
 

Submitters