Crystallinities and Light Emitting Properties of Nanostructured SiGe Alloy Prepared by Pulsed Laser Ablation in Inert Background Gases

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Crystallinities and Light Emitting Properties of Nanostructured SiGe Alloy Prepared by Pulsed Laser Ablation in Inert Background Gases

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Title: Crystallinities and Light Emitting Properties of Nanostructured SiGe Alloy Prepared by Pulsed Laser Ablation in Inert Background Gases
Author: Makino, Toshiharu; Murakami, Kouichi; Orii, Takaaki; Lowndes, Douglas H.; Suzuki, Nobuyasu; Geohegan, David B.; Yoshida, Takehito; Yamada, Yuka; Aziz, Michael

Note: Order does not necessarily reflect citation order of authors.

Citation: Yoshida, Takehito, Yuka Yamada, Nobuyasu Suzuki, Toshiharu Makino, Takaaki Orii, Kouichi Murakami, David B. Geohegan, Douglas H. Lowndes, and Michael J. Aziz. 1999. Crystallinities and light emitting properties of nanostructured SiGe alloy prepared by pulsed laser ablation in inert background gases. Proceedings of SPIE 3618: 512-519.
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Abstract: For studying the material properties of nanostructured group IV materials, we have developed a pulsed laser ablation method into inert background gases. SiGe alloy nanocrystallites have the possibility of novel band structure engineering by controlling not only compositions but also particle sizes. An ArF excimer laser was focused onto the surface of the powder-sintered SixGe1-x target. During the laser ablation, He gas was introduced into a vacuum chamber and was maintained at a constant pressure. Size distribution of the SixGe1-x ultrafine particles decreases with decreasing composition x under fixed conditions of deposition such as background gas pressure. Raman scattering spectra of the deposited SiGe ultrafine particles show three peaks ascribed to mixed crystalline SiGe after annealing, and the linewidths of these peaks broaden due to the reduced size of the crystallites. The frequencies and intensities of the peaks depend on the composition x. Visible PL spectra have broad peaks from 2.25 eV to 2.10 eV, at room temperature. The peak positions show blue shifts with increasing x. Electroluminescent diodes with the Si(.8)Ge(.2) nanocrystallite active region were fabricated, and emit visible light peaked at around 1.8 eV, at room temperature.
Published Version: http://dx.doi.org/10.1117/12.352722
Other Sources: http://www.seas.harvard.edu/matsci/people/aziz/publications/mja119.pdf
Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:2796936

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  • FAS Scholarly Articles [7078]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University
 
 

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