The Activation Strain Tensor: Nonhydrostatic Stress Effects on Crystal-Growth Kinetics

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The Activation Strain Tensor: Nonhydrostatic Stress Effects on Crystal-Growth Kinetics

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dc.contributor.author Aziz, Michael
dc.contributor.author Sabin, Paul C.
dc.contributor.author Lu, Guo-Quan
dc.date.accessioned 2009-04-29T20:30:03Z
dc.date.issued 1991
dc.identifier.citation Aziz, Michael J., Paul C. Sabin, and Guo-Quan Lu. 1991. The Activation Strain tensor: Nonhydrostatic stress effects on crystal growth kinetics. Physical Review B 44(18): 9812-9816. en
dc.identifier.issn 0163-1829 en
dc.identifier.issn 1098-0121 en
dc.identifier.uri http://nrs.harvard.edu/urn-3:HUL.InstRepos:2860451
dc.description.abstract The solid-phase epitaxial-growth rate of crystalline Si from the amorphous Si on the tensile side is greater than on the compressive side of elastically bent wafers, in marked contrast to the behavior observed under hydrostatic pressure. The phenomenology of an activation strain tensor, the nonhydrostatic analogue of the activation volume, is developed to characterize such measurements. The measurement permits us to characterize to first order the entire activation strain tensor for solid-phase epitaxy of Si(001): The transition state for this process involves an in-plane expansion and a contraction in the direction normal to the interface. Its symmetry is inconsistent with all proposed bulk point-defect mechanisms. en
dc.description.sponsorship Engineering and Applied Sciences en
dc.language.iso en_US en
dc.publisher American Physical Society en
dc.relation.isversionof http://dx.doi.org/doi:10.1103/PhysRevB.44.9812 en
dc.relation.hasversion http://www.seas.harvard.edu/matsci/people/aziz/publications/mja049.pdf en
dash.license LAA
dc.title The Activation Strain Tensor: Nonhydrostatic Stress Effects on Crystal-Growth Kinetics en
dc.relation.journal Physical Review B en
dash.depositing.author Aziz, Michael

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  • FAS Scholarly Articles [7220]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University

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