Role of Chemical Potentials in Surface Reconstruction: A New Model and Phase Transition of GaAs(111)2x2

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Title:	Role of Chemical Potentials in Surface Reconstruction: A New Model and Phase Transition of GaAs(111)2x2
Author:	Kaxiras, Efthimios; Joannopoulos, John D.; Pandey, K.C.; Bar-Yam, Yaneer Note: Order does not necessarily reflect citation order of authors.
Citation:	Kaxiras, Efthimios, K. C. Pandey, Yaneer Bar-Yam, and John D. Joannopoulos. Role of chemical potentials in surface reconstruction: A new model and phase transition of GaAs(111)2x2. Physical Review Letters 56, no. 26: 2819-2821.
Full Text & Related Files:	Kaxiras_ChemPotentialsNewModel.pdf (811.6Kb; PDF)
Abstract:	The role of chemical potentials in surface reconstructions is examined and shown to be crucial for binary semiconductor srufaces such as GaAs(111)2×2. We predict that under As-rich conditions a new model, the As triangle, is the lowest-energy geometry, whereas the Ga-vacancy model is appropriate for Ga-rich conditions. A change in the relative chemical potential of Ga and As should produce a phase transition between the two structures.
Published Version:	http://dx.doi.org/10.1103/PhysRevLett.56.2819
Terms of Use:	This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page:	http://nrs.harvard.edu/urn-3:HUL.InstRepos:2894634

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