Time-Resolved Reflectivity Measurement of The Pressure-Enhanced Crystallization Rate of Amorphous Si in a Diamond Anvil Cell
DSpace/Manakin Repository
Time-Resolved Reflectivity Measurement of The Pressure-Enhanced Crystallization Rate of Amorphous Si in a Diamond Anvil Cell
| Title: | Time-Resolved Reflectivity Measurement of The Pressure-Enhanced Crystallization Rate of Amorphous Si in a Diamond Anvil Cell |
| Author: |
Lu, Guo-Quan; Aziz, Michael; Nygren, Eric; Turnbull, David; White, C. Woody
Note: Order does not necessarily reflect citation order of authors. |
| Citation: | Lu, Guo-Quan, Eric Nygren, Michael J. Aziz, David Turnbull, and C. Woody White. 1988. Time-Resolved reflectivity measurement of the pressure-enhanced crystallization rate of amorphous Si in a diamond anvil cell. Materials Research Society Symposia Proceedings 100: 435-440. |
| Full Text & Related Files: |
Lu_TimeResolved.pdf (337.6Kb; PDF) 
|
| Abstract: | The authors have measured the pressure dependence of the solid phase epitaxial growth (SPEG) rate of self-implanted Si (100) by using the in-situ time-resolved reflectivity technique in a high-temperature and high-pressure diamond anvil cell (DAC). With fluid argon as the pressure transmission medium, a clean and perfectly hydrostatic pressure environment is achieved around the sample. The external heating geometry employed in the DAC provides a uniform temperature across the sample. At temperatures in the range of 530-550 deg C and pressure up to 50 kbars (5 GPa), the growth rate is enhanced by up to a factor of ten over that at 1 atmosphere pressure. The results are characterized by a negative activation volume of approximately -3.0 cm/sup 3mole (-27% of the atomic volume). These preliminary results show a significantly weaker pressure dependence than does the previous work of Nygren et al. (1985), who found an activation volume of -8.7 cm/sup 3mole. The implications of these results for the nature of the defect responsible for thermal SPEG and irradiation enhanced SPEG is discussed. |
| Published Version: | http://www.mrs.org/s_mrs/sec.asp?CID=1646&DID=8855 |
| Other Sources: | http://www.seas.harvard.edu/matsci/people/aziz/publications/mja037.pdf |
| Terms of Use: | This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA |
| Citable link to this page: | http://nrs.harvard.edu/urn-3:HUL.InstRepos:2913133 |
This item appears in the following Collection(s)
-
FAS Scholarly Articles [5171]
Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University
Contact administrator regarding this item (to report mistakes or request changes)
