Hydrogenation of Semiconductor Surfaces: Si and Ge (111)

DSpace/Manakin Repository

Hydrogenation of Semiconductor Surfaces: Si and Ge (111)

Citable link to this page

. . . . . .

Title: Hydrogenation of Semiconductor Surfaces: Si and Ge (111)
Author: Kaxiras, Efthimios; Joannopoulos, John D.

Note: Order does not necessarily reflect citation order of authors.

Citation: Kaxiras, Efthimios and John D. Joannopoulos. 1988. Hydrogenation of semiconductor surfaces: Si and Ge (111). Physical Review B 37(15): 8842-8848.
Full Text & Related Files:
Abstract: The relaxations of hydrogenated Si and Ge (111) surfaces are determined using ab initio self-consistent calculations in a slab configuration. The Si-H and Ge-H bonds are found to be considerably larger than the sum of covalent radii. The substrate relaxations are small and their physical origin can be explained in terms of electronic charge transfer which eliminates the surface dipole moment. The calculated frequencies of the hydrogen vibrational modes are in excellent agreement with experiment. A surface-atom vibrational mode is compared to similar modes in the amorphous hydrogenated materials. The comparison predicts that internal surfaces (microvoids) in the amorphous network are locally much softer than the corresponding crystalline surface configuration.
Published Version: http://dx.doi.org/10.1103/PhysRevB.37.8842
Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:2961255

Show full Dublin Core record

This item appears in the following Collection(s)

  • FAS Scholarly Articles [6868]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University
 
 

Search DASH


Advanced Search
 
 

Submitters