Effect of Pressure on Arsenic Diffusion in Germanium: Evidence Against Simple Vacancy Mechanism

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Effect of Pressure on Arsenic Diffusion in Germanium: Evidence Against Simple Vacancy Mechanism

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Title: Effect of Pressure on Arsenic Diffusion in Germanium: Evidence Against Simple Vacancy Mechanism
Author: Aziz, Michael; Poker, David B.; Schiferl, David; Mitha, Salman

Note: Order does not necessarily reflect citation order of authors.

Citation: Mitha, Salman, Michael J. Aziz, David Schiferl, and David B. Poker. 1997. Effect of pressure on Arsenic diffusion in Germanium: Evidence against simple vacancy mechanism. Defect and Diffusion Forum 143-147: 1041-1046
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Abstract: We have measured the effect of pressure on As diffusion in Ge. Diffusion anneals on ion-implanted samples were carried out in a high temperature diamond anvil cell using fluid argon as a clean, hydrostatic pressure medium. At 575 degree Celsius over the pressure range 0.1 to 4 GPa, pressure slightly enhances the diffusivity, characterized by an activation volume of -1.7±1.4 cm^3/mole or -0.12±0.10 times the atomic volume of Ge. The results call into question the prevailing view that diffusion of group III, IV and V elements is mediated entirely by vacancies. Potential explanations of these results are discussed.
Published Version: http://dx.doi.org/10.4028/www.scientific.net/DDF.143-147.1041
Other Sources: http://www.seas.harvard.edu/matsci/people/aziz/publications/aziz-pubs.html
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:3153323

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  • FAS Scholarly Articles [7594]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University
 
 

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