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Title:	Effect of Pressure on Arsenic Diffusion in Germanium: Evidence Against Simple Vacancy Mechanism
Author:	Aziz, Michael; Poker, David B.; Schiferl, David; Mitha, Salman Note: Order does not necessarily reflect citation order of authors.
Citation:	Mitha, Salman, Michael J. Aziz, David Schiferl, and David B. Poker. 1997. Effect of pressure on Arsenic diffusion in Germanium: Evidence against simple vacancy mechanism. Defect and Diffusion Forum 143-147: 1041-1046
Access Status:	At the direction of the depositing author this work is not currently accessible through DASH.
Full Text & Related Files:	Mitha_EffectPressueArsenic.pdf (103.7Kb; PDF)
Abstract:	We have measured the effect of pressure on As diffusion in Ge. Diffusion anneals on ion-implanted samples were carried out in a high temperature diamond anvil cell using fluid argon as a clean, hydrostatic pressure medium. At 575 degree Celsius over the pressure range 0.1 to 4 GPa, pressure slightly enhances the diffusivity, characterized by an activation volume of -1.7±1.4 cm^3/mole or -0.12±0.10 times the atomic volume of Ge. The results call into question the prevailing view that diffusion of group III, IV and V elements is mediated entirely by vacancies. Potential explanations of these results are discussed.
Published Version:	http://dx.doi.org/10.4028/www.scientific.net/DDF.143-147.1041
Other Sources:	http://www.seas.harvard.edu/matsci/people/aziz/publications/aziz-pubs.html
Citable link to this page:	http://nrs.harvard.edu/urn-3:HUL.InstRepos:3153323

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  Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University

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