Point Defect Engineered Si Sub-Bandgap Light-Emitting Diode

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Point Defect Engineered Si Sub-Bandgap Light-Emitting Diode

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Title: Point Defect Engineered Si Sub-Bandgap Light-Emitting Diode
Author: Capasso, Federico; Aziz, Michael; Williams, James; Charnvanichborikarn, Supakit; Kim, Taegon; Tabbal, Malek; Bao, Jiming

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Citation: Bao, Jiming, Malek Tabal, Taegon Kim, Supakit Charnvanichborikarn, James S. Williams, Michael J. Aziz, and Federico Capasso. 2007. Point defect engineered Si sub-bandgap light-emitting diode. Optics Express 17, no. 7: 1333-1340.
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Abstract: We extensively study the propagation features of higher-order modes in a photonic crystal fiber (PCF). Our analysis is based on a full-vector modal technique specially adapted to accurately describe light propagation in PCF’s. Unlike conventional fibers, PCF’s exhibit a somewhat unusual mechanism for the generation of higher-order modes. Accordingly, PCF’s are characterized by the constancy of the number of modes below a wavelength threshold. An explicit verification of this property is given through a complete analysis of the dispersion relations of higher-order modes in terms of the structural parameters of this kind of fiber. The transverse irradiance distributions for some of these higher-order modes are also presented, showing an excellent agreement with recent experimental measurements. In the same way, the full-vector nature of our approach allows us to analyze the rich polarization structure of the PCF mode spectrum.
Published Version: http://dx.doi.org/10.1364/JOSAA.17.001333
Other Sources: http://www.seas.harvard.edu/matsci/people/aziz/publications/mja175.pdf
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:3163267

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  • FAS Scholarly Articles [6466]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University
 
 

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