Ultrathin CVD Cu Seed Layer Formation Using Copper Oxynitride Deposition and Room Temperature Remote Hydrogen Plasma Reduction

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Ultrathin CVD Cu Seed Layer Formation Using Copper Oxynitride Deposition and Room Temperature Remote Hydrogen Plasma Reduction

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dc.contributor.author Kim, Hoon
dc.contributor.author Bhandari, Harish B
dc.contributor.author Xu, Sheng
dc.contributor.author Gordon, Roy Gerald
dc.date.accessioned 2009-10-13T15:46:18Z
dc.date.issued 2008
dc.identifier.citation Kim, Hoon, Harish B. Bhandari, Sheng Xu, Roy G. Gordon. 2008. Ultrathin CVD Cu seed layer formation using copper oxynitride deposition and room temperature remote hydrogen plasma reduction. Journal of The Electrochemical Society 155, no. 7: H496-H503. en_US
dc.identifier.issn 0013-4651 en_US
dc.identifier.uri http://nrs.harvard.edu/urn-3:HUL.InstRepos:3347571
dc.description.abstract Cu seed layers for future interconnects must have conformal step coverage, smooth surface morphology, and strong adhesion. Conformal deposition had been achieved by chemical vapor deposition (CVD), but CVD Cu films have rough surfaces and poor adhesion. In this paper, conformal, smooth, adherent, continuous, and thin (<9 nm) Cu films were made by CVD. CuON was deposited from a Cu-amidinate precursor, H2O, and NH3 at 140–180°C on Ru. Crystallites in the deposited film have either a Cu2O or Cu3N structure depending on the ratio of H2O to NH3. As-deposited CuON films have a smooth surface morphology [~0.5 nm root-mean-square (rms) roughness] and are highly conformal (>95% step coverage in 40:1 aspect ratio holes). The CuON films were then reduced with remote hydrogen plasma near room temperature to minimize agglomeration of the thin Cu films during reduction. After reduction, CuON films having a Cu2O crystal structure showed a higher density Cu film (95%) than those having a Cu3N crystal structure (84%). Both reduced Cu films had a smooth morphology (~1 nm rms roughness). Thus, deposition of a CuON film having a Cu2O crystal structure and then reduction with remote hydrogen plasma can make Cu layers that can serve as seed layers of future Cu interconnects. en_US
dc.description.sponsorship Chemistry and Chemical Biology en_US
dc.language.iso en_US en_US
dc.publisher Electrochemical Society en_US
dc.relation.isversionof http://dx.doi.org/10.1149/1.2912326 en_US
dc.relation.hasversion http://www.chem.harvard.edu/groups/gordon/publicationsearch.html en_US
dash.license LAA
dc.subject adhesion en_US
dc.subject copper compounds en_US
dc.subject crystal structure en_US
dc.subject crystallites en_US
dc.subject density en_US
dc.subject plasma CVD en_US
dc.subject plasma CVD coatings en_US
dc.subject reduction (chemical) en_US
dc.subject surface roughness en_US
dc.subject thin films en_US
dc.title Ultrathin CVD Cu Seed Layer Formation Using Copper Oxynitride Deposition and Room Temperature Remote Hydrogen Plasma Reduction en_US
dc.type Journal Article en_US
dc.description.version Version of Record en_US
dc.relation.journal Journal of The Electrochemical Society en_US
dash.depositing.author Gordon, Roy Gerald
dc.date.available 2009-10-13T15:46:18Z

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  • FAS Scholarly Articles [6902]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University

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