Atomic Layer Deposition of Ruthenium Thin Films From an Amidinate Precursor

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Atomic Layer Deposition of Ruthenium Thin Films From an Amidinate Precursor

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Title: Atomic Layer Deposition of Ruthenium Thin Films From an Amidinate Precursor
Author: Ulfig, Robert M.; Alvis, Roger; Gordon, Roy Gerald; Wang, Hongtao

Note: Order does not necessarily reflect citation order of authors.

Citation: Wang, Hongtao, Roy G. Gordon, Roger Alvis, and Robert M. Ulfig. Forthcoming. Atomic layer deposition of ruthenium thin films from an amidinate precursor. Chemical Vapor Deposition.
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Abstract: Ruthenium thin films were deposited by atomic layer deposition from bis(N,N’-di-tert-butylacetamidinato)ruthenium(II) dicarbonyl and O2. Highly conductive, dense and pure thin films can be deposited when oxygen exposure EO approaches a certain threshold ( Emax ). When EO > Emax, the film peels off due to the recombinative desorption of O2 at the film/substrate interface. Analysis by an atomic probe microscope shows that the crystallites are nearly free of carbon impurity (<0.1 at.%), while a low level of carbon (<0.5 at.%) is segregated near the grain boundaries. The atom probe microscope also shows that a small amount of O impurity (0.3 at.%) is distributed uniformly between the crystallites and the grain boundaries.
Published Version: http://www3.interscience.wiley.com/journal/10003226/home
Terms of Use: This article is made available under the terms and conditions applicable to Open Access Policy Articles, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#OAP
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:3347576

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  • FAS Scholarly Articles [7594]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University
 
 

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