Atomic Layer Deposition of Ruthenium Thin Films From an Amidinate Precursor

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Atomic Layer Deposition of Ruthenium Thin Films From an Amidinate Precursor

Show simple item record Ulfig, Robert M. Alvis, Roger Gordon, Roy Gerald Wang, Hongtao 2009-10-14T12:49:42Z 2009-10-14
dc.identifier.citation Wang, Hongtao, Roy G. Gordon, Roger Alvis, and Robert M. Ulfig. Forthcoming. Atomic layer deposition of ruthenium thin films from an amidinate precursor. Chemical Vapor Deposition. en_US
dc.identifier.issn 0948-1907 en_US
dc.description.abstract Ruthenium thin films were deposited by atomic layer deposition from bis(N,N’-di-tert-butylacetamidinato)ruthenium(II) dicarbonyl and O2. Highly conductive, dense and pure thin films can be deposited when oxygen exposure EO approaches a certain threshold ( Emax ). When EO > Emax, the film peels off due to the recombinative desorption of O2 at the film/substrate interface. Analysis by an atomic probe microscope shows that the crystallites are nearly free of carbon impurity (<0.1 at.%), while a low level of carbon (<0.5 at.%) is segregated near the grain boundaries. The atom probe microscope also shows that a small amount of O impurity (0.3 at.%) is distributed uniformly between the crystallites and the grain boundaries. en_US
dc.description.sponsorship Chemistry and Chemical Biology en_US
dc.description.sponsorship Engineering and Applied Sciences en_US
dc.language.iso en_US en_US
dc.publisher John Wiley & Sons en_US
dc.relation.isversionof en_US
dash.license OAP
dc.subject O2 exposure en_US
dc.subject atomic layer deposition en_US
dc.subject ruthenium thin films en_US
dc.title Atomic Layer Deposition of Ruthenium Thin Films From an Amidinate Precursor en_US
dc.type Journal Article en_US
dc.description.version Accepted Manuscript en_US
dc.relation.journal Chemical Vapor Deposition en_US Gordon, Roy Gerald 2009-10-14T12:49:42Z

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  • FAS Scholarly Articles [8268]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University

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