Atomic Layer Deposition of Ruthenium Thin Films From an Amidinate Precursor

Atomic Layer Deposition of Ruthenium Thin Films From an Amidinate Precursor

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Atomic Layer Deposition of Ruthenium Thin Films From an Amidinate Precursor

dc.contributor.author	Ulfig, Robert M.
dc.contributor.author	Alvis, Roger
dc.contributor.author	Gordon, Roy Gerald
dc.contributor.author	Wang, Hongtao
dc.date.accessioned	2009-10-14T12:49:42Z
dc.date.issued	2009-10-14
dc.identifier.citation	Wang, Hongtao, Roy G. Gordon, Roger Alvis, and Robert M. Ulfig. Forthcoming. Atomic layer deposition of ruthenium thin films from an amidinate precursor. Chemical Vapor Deposition.	en_US
dc.identifier.issn	0948-1907	en_US
dc.identifier.uri	http://nrs.harvard.edu/urn-3:HUL.InstRepos:3347576
dc.description.abstract	Ruthenium thin films were deposited by atomic layer deposition from bis(N,N’-di-tert-butylacetamidinato)ruthenium(II) dicarbonyl and O2. Highly conductive, dense and pure thin films can be deposited when oxygen exposure EO approaches a certain threshold ( Emax ). When EO > Emax, the film peels off due to the recombinative desorption of O2 at the film/substrate interface. Analysis by an atomic probe microscope shows that the crystallites are nearly free of carbon impurity (<0.1 at.%), while a low level of carbon (<0.5 at.%) is segregated near the grain boundaries. The atom probe microscope also shows that a small amount of O impurity (0.3 at.%) is distributed uniformly between the crystallites and the grain boundaries.	en_US
dc.description.sponsorship	Chemistry and Chemical Biology	en_US
dc.description.sponsorship	Engineering and Applied Sciences	en_US
dc.language.iso	en_US	en_US
dc.publisher	John Wiley & Sons	en_US
dc.relation.isversionof	http://www3.interscience.wiley.com/journal/10003226/home	en_US
dash.license	OAP
dc.subject	O2 exposure	en_US
dc.subject	atomic layer deposition	en_US
dc.subject	ruthenium thin films	en_US
dc.title	Atomic Layer Deposition of Ruthenium Thin Films From an Amidinate Precursor	en_US
dc.type	Journal Article	en_US
dc.description.version	Accepted Manuscript	en_US
dc.relation.journal	Chemical Vapor Deposition	en_US
dash.depositing.author	Gordon, Roy Gerald
dc.date.available	2009-10-14T12:49:42Z