Direct Injection Tunnel Spectroscopy of a p-n Junction
| Title: | Direct Injection Tunnel Spectroscopy of a p-n Junction |
| Author: |
Likovich, Edward Michael; Russell, Kasey Joe; Narayanamurti, Venkatesh; Lu, Hong; Gossard, Arthur C.
Note: Order does not necessarily reflect citation order of authors. |
| Citation: | Likovich, Edward M., Kasey J. Russell, Venkatesh Narayanamurti, Hong Lu, and Arthur C. Gossard. 2009. Direct injection tunnel spectroscopy of a p-n junction. Applied Physics Letters 95(2): 022106. |
| Full Text & Related Files: |
Likovich_etal_Direct.pdf (151.7Kb; PDF) 
|
| Abstract: | We demonstrate spectroscopic measurements on an InGaAs p-n junction using direct tunnel injection of electrons. In contrast to the metal-base transistor design of conventional ballistic electron emission spectroscopy (BEES), the base layer of our device is comprised of a thin, heavily doped p-type region. By tunneling directly into the semiconductor, we observe a significant increase in collector current compared to conventional BEES measurements. This could enable the study of systems and processes that have thus far been difficult to probe with the low-electron collection efficiency of conventional BEES, such as luminescence from single-buried quantum dots. |
| Published Version: | doi:10.1063/1.3177191 |
| Other Sources: | http://www.seas.harvard.edu/venky/pdffiles/BEES_pnjunction.pdf |
| Terms of Use: | This article is made available under the terms and conditions applicable to Open Access Policy Articles, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#OAP |
| Citable link to this page: | http://nrs.harvard.edu/urn-3:HUL.InstRepos:3606234 |
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