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dc.contributor.authorLikovich, Edward Michael
dc.contributor.authorRussell, Kasey Joe
dc.contributor.authorPetersen, Eric W.
dc.contributor.authorNarayanamurti, Venkatesh
dc.date.accessioned2010-02-01T15:31:30Z
dc.date.issued2009
dc.identifier.citationLikovich, Edward M., Kasey J. Russell, Eric W. Petersen, and Venkatesh Narayanamurti. 2009. Weak localization and mobility in ZnO nanostructures. Physical Review B 80(24): 245318.en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:3606239
dc.description.abstractWe conduct a comprehensive investigation into the electronic and magnetotransport properties of ZnO nanoplates grown concurrently with ZnO nanowires by the vapor-liquid-solid method. We present magnetoresistance data showing weak localization in our nanoplates and probe its dependence on temperature and carrier concentration. We measure phase coherence lengths of 50–100 nm at 1.9 K and, because we do not observe spin-orbit scattering through antilocalization, suggest that ZnO nanostructures may be promising for further spintronic study. We then proceed to study the effect of weak localization on electron mobility using four-terminal van der Pauw resistivity and Hall measurements versus temperature and carrier concentration. We report an electron mobility of ∼100 cm2/V s at 275 K, comparable to what is observed in ZnO thin films. We compare Hall mobility to field-effect mobility, which is more commonly reported in studies on ZnO nanowires and find that field-effect mobility tends to overestimate Hall mobility by a factor of 2 in our devices. Finally, we comment on temperature-dependent hysteresis observed during transconductance measurements and its relationship to mobile, positively charged Zn interstitial impurities.en_US
dc.description.sponsorshipEngineering and Applied Sciencesen_US
dc.language.isoen_USen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofdoi:10.1103/PhysRevB.80.245318en_US
dash.licenseOAP
dc.titleWeak Localization and Mobility in ZnO Nanostructuresen_US
dc.typeJournal Articleen_US
dc.description.versionAccepted Manuscripten_US
dc.relation.journalPhysical Review Ben_US
dash.depositing.authorNarayanamurti, Venkatesh
dc.date.available2010-02-01T15:31:30Z
dc.identifier.doi10.1103/PhysRevB.80.245318*
dash.contributor.affiliatedRussell, Kasey
dash.contributor.affiliatedLikovich, Edward Michael
dash.contributor.affiliatedNarayanamurti, Venkatesh


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