Weak Localization and Mobility in ZnO Nanostructures

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Weak Localization and Mobility in ZnO Nanostructures

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dc.contributor.author Likovich, Edward Michael
dc.contributor.author Russell, Kasey Joe
dc.contributor.author Petersen, Eric W.
dc.contributor.author Narayanamurti, Venkatesh
dc.date.accessioned 2010-02-01T15:31:30Z
dc.date.issued 2009
dc.identifier.citation Likovich, Edward M., Kasey J. Russell, Eric W. Petersen, and Venkatesh Narayanamurti. 2009. Weak localization and mobility in ZnO nanostructures. Physical Review B 80(24): 245318. en_US
dc.identifier.issn 1098-0121 en_US
dc.identifier.uri http://nrs.harvard.edu/urn-3:HUL.InstRepos:3606239
dc.description.abstract We conduct a comprehensive investigation into the electronic and magnetotransport properties of ZnO nanoplates grown concurrently with ZnO nanowires by the vapor-liquid-solid method. We present magnetoresistance data showing weak localization in our nanoplates and probe its dependence on temperature and carrier concentration. We measure phase coherence lengths of 50–100 nm at 1.9 K and, because we do not observe spin-orbit scattering through antilocalization, suggest that ZnO nanostructures may be promising for further spintronic study. We then proceed to study the effect of weak localization on electron mobility using four-terminal van der Pauw resistivity and Hall measurements versus temperature and carrier concentration. We report an electron mobility of ∼100 cm2/V s at 275 K, comparable to what is observed in ZnO thin films. We compare Hall mobility to field-effect mobility, which is more commonly reported in studies on ZnO nanowires and find that field-effect mobility tends to overestimate Hall mobility by a factor of 2 in our devices. Finally, we comment on temperature-dependent hysteresis observed during transconductance measurements and its relationship to mobile, positively charged Zn interstitial impurities. en_US
dc.description.sponsorship Engineering and Applied Sciences en_US
dc.language.iso en_US en_US
dc.publisher American Physical Society en_US
dc.relation.isversionof doi:10.1103/PhysRevB.80.245318 en_US
dash.license OAP
dc.title Weak Localization and Mobility in ZnO Nanostructures en_US
dc.type Journal Article en_US
dc.description.version Accepted Manuscript en_US
dc.relation.journal Physical Review B en_US
dash.depositing.author Narayanamurti, Venkatesh
dc.date.available 2010-02-01T15:31:30Z

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  • FAS Scholarly Articles [7103]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University

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