Pulsed Excimer (KrF) Laser Melting of Amorphous and Crystalline Silicon Layers

DSpace/Manakin Repository

. . . . . .

Title:	Pulsed Excimer (KrF) Laser Melting of Amorphous and Crystalline Silicon Layers
Author:	Walthuis, A.; Stritzker, B.; White, C.W.; Narayan, J.; Aziz, Michael Note: Order does not necessarily reflect citation order of authors.
Citation:	Narayan, J., C. W. White, M. J. Aziz, B. Stritzker, and A. Walthuis. 1985. Pulsed excimer (KrF) laser melting of amorphous and crystalline silicon layers. Journal of Applied Physics 57 (2): 564-567.
Full Text & Related Files:	Narayan et al_1985.pdf (675.2Kb; PDF)
Abstract:	We have investigated depth of melting as a function of pulse energy density in amorphous and crystalline silicon layers. The melting threshold for KrF laser pulses (lambda=0.249 µm, tau=24×10−9 s) in amorphous (7660-Å-thick) and crystalline silicon layers were determined to be 0.16±0.02 and 0.75±0.05 J cm−2, respectively. The formation of fine- and large-polycrystalline regions was clearly identified in the amorphous silicon layers for energy densities below that needed for complete annealing. The role of explosive recrystallization in the formation of the fine polycrystalline region is discussed.
Published Version:	http://dx.doi.org/10.1063/1.334738
Terms of Use:	This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page:	http://nrs.harvard.edu/urn-3:HUL.InstRepos:3708236

FAS Scholarly Articles [5128]
Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University