Fabrication and Sub-Band-Gap Absorption of Single-Crystal Si Supersaturated with Se by Pulsed Laser Mixing

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Fabrication and Sub-Band-Gap Absorption of Single-Crystal Si Supersaturated with Se by Pulsed Laser Mixing

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dc.contributor.author Tabbal, Malek
dc.contributor.author Kim, Taegon
dc.contributor.author Woolf, David Nathaniel
dc.contributor.author Shin, Byungha
dc.contributor.author Aziz, Michael J.
dc.date.accessioned 2010-08-12T15:14:49Z
dc.date.issued 2010
dc.identifier.citation Tabbal, Malek, Taegon Kim, David N. Woolf, Byungha Shin, and Michael J. Aziz. 2010. Fabrication and sub-band-gap absorption of single-crystal Si supersaturated with Se by pulsed laser mixing. Applied Physics A: Materials Science & Processing 98(3): 589-594. en_US
dc.identifier.issn 0947-8396 en_US
dc.identifier.uri http://nrs.harvard.edu/urn-3:HUL.InstRepos:4341783
dc.description.abstract Selenium supersaturated silicon layers were fabricated by pulsed excimer laser induced liquid-phase mixing of thin Se films on Si(001) wafers. Sufficiently low Se coverage avoids destabilization of rapid epitaxial solidification, resulting in supersaturated solid solutions free of extended defects, as shown by transmission electron microscopy. The amount of retained Se depends on the original film thickness, the laser fluence, and the number of laser pulses irradiating the same spot on the surface. Using this method, Se has incorporated into the topmost 300 nm of the silicon with a concentration of 0.1 at.%. Channeling Rutherford backscattering spectrometry measurements show that the substitutional fraction can be as high as 75% of the total retained Se. These alloys exhibit strong sub-band-gap absorption with optical absorption coefficient ranging up to about 104 cm−1, thus making them potential candidates for applications in Si-based optoelectronic devices. en_US
dc.description.sponsorship Physics en_US
dc.language.iso en_US en_US
dc.publisher Springer en_US
dc.relation.isversionof doi:10.1007/s00339-009-5462-1 en_US
dash.license LAA
dc.title Fabrication and Sub-Band-Gap Absorption of Single-Crystal Si Supersaturated with Se by Pulsed Laser Mixing en_US
dc.type Journal Article en_US
dc.description.version Version of Record en_US
dc.relation.journal Applied Physics a Materials Science and Processing en_US
dash.depositing.author Aziz, Michael J.
dc.date.available 2010-08-12T15:14:49Z

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  • FAS Scholarly Articles [7262]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University

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