On the Temperature Dependence of Point-Defect-Mediated Luminescence in Silicon
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On the Temperature Dependence of Point-Defect-Mediated Luminescence in Silicon
| Title: | On the Temperature Dependence of Point-Defect-Mediated Luminescence in Silicon |
| Author: |
Capasso, Federico; Recht, Daniel; Aziz, Michael J.
Note: Order does not necessarily reflect citation order of authors. |
| Citation: | Recht, Daniel, Federico Capasso, and Michael J. Aziz. 2009. On the temperature dependence of point-defect-mediated luminescence in silicon. Applied Physics Letters 94(25): 251113. |
| Full Text & Related Files: |
Recht_APL_94_25113_2009.pdf (129.4Kb; PDF) 
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| Abstract: | We present a model of the temperature dependence of point-defect-mediated luminescence in silicon derived from basic kinetics and semiconductor physics and based on the kinetics of bound exciton formation. The model provides a good fit to data for W line electroluminescence and G line photoluminescence in silicon. Strategies are discussed for extending luminescence to room temperature. |
| Published Version: | http://dx.doi.org/10.1063/1.3157277 |
| Terms of Use: | This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA |
| Citable link to this page: | http://nrs.harvard.edu/urn-3:HUL.InstRepos:4341784 |
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FAS Scholarly Articles [5137]
Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University
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