On the Temperature Dependence of Point-Defect-Mediated Luminescence in Silicon

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On the Temperature Dependence of Point-Defect-Mediated Luminescence in Silicon

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Title: On the Temperature Dependence of Point-Defect-Mediated Luminescence in Silicon
Author: Capasso, Federico; Recht, Daniel; Aziz, Michael J.

Note: Order does not necessarily reflect citation order of authors.

Citation: Recht, Daniel, Federico Capasso, and Michael J. Aziz. 2009. On the temperature dependence of point-defect-mediated luminescence in silicon. Applied Physics Letters 94(25): 251113.
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Abstract: We present a model of the temperature dependence of point-defect-mediated luminescence in silicon derived from basic kinetics and semiconductor physics and based on the kinetics of bound exciton formation. The model provides a good fit to data for W line electroluminescence and G line photoluminescence in silicon. Strategies are discussed for extending luminescence to room temperature.
Published Version: http://dx.doi.org/10.1063/1.3157277
Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:4341784

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  • FAS Scholarly Articles [7374]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University
 
 

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