| dc.contributor.author | Recht, Daniel | |
| dc.contributor.author | Capasso, Federico | |
| dc.contributor.author | Aziz, Michael J. | |
| dc.date.accessioned | 2010-08-12T15:16:49Z | |
| dc.date.issued | 2009 | |
| dc.identifier.citation | Recht, Daniel, Federico Capasso, and Michael J. Aziz. 2009. On the temperature dependence of point-defect-mediated luminescence in silicon. Applied Physics Letters 94(25): 251113. | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.uri | http://nrs.harvard.edu/urn-3:HUL.InstRepos:4341784 | |
| dc.description.abstract | We present a model of the temperature dependence of point-defect-mediated luminescence in silicon derived from basic kinetics and semiconductor physics and based on the kinetics of bound exciton formation. The model provides a good fit to data for W line electroluminescence and G line photoluminescence in silicon. Strategies are discussed for extending luminescence to room temperature. | en_US |
| dc.description.sponsorship | Engineering and Applied Sciences | en_US |
| dc.language.iso | en_US | en_US |
| dc.publisher | American Institute of Physics | en_US |
| dc.relation.isversionof | http://dx.doi.org/10.1063/1.3157277 | en_US |
| dash.license | LAA | |
| dc.title | On the Temperature Dependence of Point-Defect-Mediated Luminescence in Silicon | en_US |
| dc.type | Journal Article | en_US |
| dc.description.version | Version of Record | en_US |
| dc.relation.journal | Applied Physics Letters | en_US |
| dash.depositing.author | Capasso, Federico | |
| dc.date.available | 2010-08-12T15:16:49Z | |
| dc.identifier.doi | 10.1063/1.3157277 | * |
| dash.contributor.affiliated | Recht, Daniel | |
| dash.contributor.affiliated | Capasso, Federico | |
| dash.contributor.affiliated | Aziz, Michael | |
