Nanoscale Imaging and Control of Resistance Switching in VO[sub]2 at Room Temperature

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Nanoscale Imaging and Control of Resistance Switching in VO[sub]2 at Room Temperature

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Title: Nanoscale Imaging and Control of Resistance Switching in VO[sub]2 at Room Temperature
Author: Hoffman, Jenny Eve; Kim, Jeehoon; Ko, Changhyun; Frenzel, Alex James; Ramanathan, Shriram

Note: Order does not necessarily reflect citation order of authors.

Citation: Kim, Jeehoon, Changhyun Ko, Alex Frenzel, Shriram Ramanathan, and Jennifer E. Hoffman. 2010. Nanoscale imaging and control of resistance switching in VO[sub]2 at room temperature. Applied Physics Letters 96 (213106).
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Abstract: We demonstrate controlled local phase switching of a VO[sub]2 film using a biased conducting atomic force microscope tip. After application of an initial, higher ‘training’ voltage, the resistance transition is hysteretic with IV loops converging upon repeated voltage sweep. The threshold Vset to initiate the insulator-to-metal transition is on order ∼ 5 V at room temperature, and increases at low temperature. We image large variations in Vset from grain to grain. Our imaging technique opens up the possibility for an understanding of the microscopic mechanism of phase transition in VO[sub]2 as well as its potential relevance to solid state devices.
Published Version: doi:10.1063/1.3435466
Terms of Use: This article is made available under the terms and conditions applicable to Open Access Policy Articles, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#OAP
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:4342532

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  • FAS Scholarly Articles [6463]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University
 
 

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