4He Liquid-Vapor Interface Below 1 K Studied Using X-Ray Reflectivity
| Title: | 4He Liquid-Vapor Interface Below 1 K Studied Using X-Ray Reflectivity |
| Author: |
Penanen, Konstantin; Fukuto, Masafumi; Heilmann, Ralf K.; Silvera, Isaac F.; Pershan, Peter S.
Note: Order does not necessarily reflect citation order of authors. |
| Citation: | Penanen, Konstantin, Masafumi Fukuto, Ralf K. Heilmann, Isaac F. Silvera, and Peter S. Pershan. 2000. 4He liquid-vapor interface below 1 K studied using x-ray reflectivity. Physical Review B 62(14): 9621-9640. |
| Access Status: | At the direction of the depositing author this work is not currently accessible through DASH. |
| Full Text & Related Files: |
Penanen_4He.pdf (1.531Mb; PDF) 
|
| Abstract: | The free surface of thin films of liquid helium adsorbed on a solid substrate has been studied using x-ray reflectivity. The film thickness and interfacial profile are extracted from the angular dependence of measured interference between signals reflected from the liquid-vapor and liquid-substrate interfaces. Polished silicon wafers, chemically cleaned and passivated, were used as substrates. Results are reported for measurements for 4He films 35 to 130 Å thick in the temperature range 0.44 to 1.3 K. The 10%/90% interfacial width for temperature T=0.45 K varies from 5.3±0.5 Å for 36±1.5 Å thick films to 6.5±0.5 Å for 125±1.5 Å thick films. The profile width at zero temperature should not differ significantly from that measured at T=0.45 K. For T=1.22 K, the width is 7.8±1.0 Å. |
| Published Version: | doi:10.1103/PhysRevB.62.9621 |
| Other Sources: | http://liquids.deas.harvard.edu/peter/2000.pdf/00_6_He.profile.pdf |
| Citable link to this page: | http://nrs.harvard.edu/urn-3:HUL.InstRepos:4428798 |
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