4He Liquid-Vapor Interface Below 1 K Studied Using X-Ray Reflectivity

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4He Liquid-Vapor Interface Below 1 K Studied Using X-Ray Reflectivity

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Title: 4He Liquid-Vapor Interface Below 1 K Studied Using X-Ray Reflectivity
Author: Penanen, Konstantin; Fukuto, Masafumi; Heilmann, Ralf K.; Silvera, Isaac F.; Pershan, Peter S.

Note: Order does not necessarily reflect citation order of authors.

Citation: Penanen, Konstantin, Masafumi Fukuto, Ralf K. Heilmann, Isaac F. Silvera, and Peter S. Pershan. 2000. 4He liquid-vapor interface below 1 K studied using x-ray reflectivity. Physical Review B 62(14): 9621-9640.
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Abstract: The free surface of thin films of liquid helium adsorbed on a solid substrate has been studied using x-ray reflectivity. The film thickness and interfacial profile are extracted from the angular dependence of measured interference between signals reflected from the liquid-vapor and liquid-substrate interfaces. Polished silicon wafers, chemically cleaned and passivated, were used as substrates. Results are reported for measurements for 4He films 35 to 130 Å thick in the temperature range 0.44 to 1.3 K. The 10%/90% interfacial width for temperature T=0.45 K varies from 5.3±0.5 Å for 36±1.5 Å thick films to 6.5±0.5 Å for 125±1.5 Å thick films. The profile width at zero temperature should not differ significantly from that measured at T=0.45 K. For T=1.22 K, the width is 7.8±1.0 Å.
Published Version: doi:10.1103/PhysRevB.62.9621
Other Sources: http://liquids.deas.harvard.edu/peter/2000.pdf/00_6_He.profile.pdf
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:4428798

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  • FAS Scholarly Articles [6463]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University
 
 

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