4He Liquid-Vapor Interface Below 1 K Studied Using X-Ray Reflectivity

4He Liquid-Vapor Interface Below 1 K Studied Using X-Ray Reflectivity

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4He Liquid-Vapor Interface Below 1 K Studied Using X-Ray Reflectivity

dc.contributor.author	Penanen, Konstantin
dc.contributor.author	Fukuto, Masafumi
dc.contributor.author	Heilmann, Ralf K.
dc.contributor.author	Silvera, Isaac F.
dc.contributor.author	Pershan, Peter S.
dc.date.accessioned	2010-09-08T13:39:14Z
dc.date.issued	2000
dc.identifier.citation	Penanen, Konstantin, Masafumi Fukuto, Ralf K. Heilmann, Isaac F. Silvera, and Peter S. Pershan. 2000. 4He liquid-vapor interface below 1 K studied using x-ray reflectivity. Physical Review B 62(14): 9621-9640.	en_US
dc.identifier.issn	1098-0121	en_US
dc.identifier.uri	http://nrs.harvard.edu/urn-3:HUL.InstRepos:4428798
dc.description.abstract	The free surface of thin films of liquid helium adsorbed on a solid substrate has been studied using x-ray reflectivity. The film thickness and interfacial profile are extracted from the angular dependence of measured interference between signals reflected from the liquid-vapor and liquid-substrate interfaces. Polished silicon wafers, chemically cleaned and passivated, were used as substrates. Results are reported for measurements for 4He films 35 to 130 Å thick in the temperature range 0.44 to 1.3 K. The 10%/90% interfacial width for temperature T=0.45 K varies from 5.3±0.5 Å for 36±1.5 Å thick films to 6.5±0.5 Å for 125±1.5 Å thick films. The profile width at zero temperature should not differ significantly from that measured at T=0.45 K. For T=1.22 K, the width is 7.8±1.0 Å.	en_US
dc.description.sponsorship	Engineering and Applied Sciences	en_US
dc.language.iso	en_US	en_US
dc.publisher	American Physical Society	en_US
dc.relation.isversionof	doi:10.1103/PhysRevB.62.9621	en_US
dc.relation.hasversion	http://liquids.deas.harvard.edu/peter/2000.pdf/00_6_He.profile.pdf	en_US
dash.license	META_ONLY
dc.title	4He Liquid-Vapor Interface Below 1 K Studied Using X-Ray Reflectivity	en_US
dc.type	Journal Article	en_US
dc.description.version	Version of Record	en_US
dc.relation.journal	Physical Review -Series B-	en_US
dash.depositing.author	Pershan, Peter S.
dash.embargo.until	10000-01-01