4He Liquid-Vapor Interface Below 1 K Studied Using X-Ray Reflectivity

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4He Liquid-Vapor Interface Below 1 K Studied Using X-Ray Reflectivity

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dc.contributor.author Penanen, Konstantin
dc.contributor.author Fukuto, Masafumi
dc.contributor.author Heilmann, Ralf K.
dc.contributor.author Silvera, Isaac F.
dc.contributor.author Pershan, Peter S.
dc.date.accessioned 2010-09-08T13:39:14Z
dc.date.issued 2000
dc.identifier.citation Penanen, Konstantin, Masafumi Fukuto, Ralf K. Heilmann, Isaac F. Silvera, and Peter S. Pershan. 2000. 4He liquid-vapor interface below 1 K studied using x-ray reflectivity. Physical Review B 62(14): 9621-9640. en_US
dc.identifier.issn 1098-0121 en_US
dc.identifier.uri http://nrs.harvard.edu/urn-3:HUL.InstRepos:4428798
dc.description.abstract The free surface of thin films of liquid helium adsorbed on a solid substrate has been studied using x-ray reflectivity. The film thickness and interfacial profile are extracted from the angular dependence of measured interference between signals reflected from the liquid-vapor and liquid-substrate interfaces. Polished silicon wafers, chemically cleaned and passivated, were used as substrates. Results are reported for measurements for 4He films 35 to 130 Å thick in the temperature range 0.44 to 1.3 K. The 10%/90% interfacial width for temperature T=0.45 K varies from 5.3±0.5 Å for 36±1.5 Å thick films to 6.5±0.5 Å for 125±1.5 Å thick films. The profile width at zero temperature should not differ significantly from that measured at T=0.45 K. For T=1.22 K, the width is 7.8±1.0 Å. en_US
dc.description.sponsorship Engineering and Applied Sciences en_US
dc.language.iso en_US en_US
dc.publisher American Physical Society en_US
dc.relation.isversionof doi:10.1103/PhysRevB.62.9621 en_US
dc.relation.hasversion http://liquids.deas.harvard.edu/peter/2000.pdf/00_6_He.profile.pdf en_US
dash.license META_ONLY
dc.title 4He Liquid-Vapor Interface Below 1 K Studied Using X-Ray Reflectivity en_US
dc.type Journal Article en_US
dc.description.version Version of Record en_US
dc.relation.journal Physical Review -Series B- en_US
dash.depositing.author Pershan, Peter S.
dash.embargo.until 10000-01-01

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  • FAS Scholarly Articles [7501]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University

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