Magnetoresistance in an Asymmetric GaMnAs Resonant Tunneling Diode

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Magnetoresistance in an Asymmetric GaMnAs Resonant Tunneling Diode

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Title: Magnetoresistance in an Asymmetric GaMnAs Resonant Tunneling Diode
Author: Likovich, Edward Michael; Russell, Kasey Joe; Yi, Wei; Narayanamurti, Venkatesh; Ku, Keh-Chiang; Zhu, Meng; Samarth, Nitin

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Citation: Likovich, Edward M., Kasey J. Russell, Wei Yi, Venkatesh Narayanamurti, Keh-Chiang Ku, Meng Zhu, and Nitin Samarth. 2009. Magnetoresistance in an asymmetric GaMnAs resonant tunneling diode. Physical Review B 80(20): 201307.
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Abstract: In a GaMnAs/AlGaAs resonant tunneling diode (RTD) structure, we observe that both the magnitude and polarity of magnetoresistance are bias dependent when tunneling from a three-dimensional GaMnAs layer through a two-dimensional GaMnAs quantum well. This magnetoresistance behavior results from a shift of negative differential resistance features to higher bias as the relative alignment of the GaMnAs layer magnetizations is changed from parallel to antiparallel. Our observations agree with recent predictions from a theoretical analysis of a similar n-type structure by Ertler and Fabian, and our results suggest that further investigation into ferromagnetic RTD structures may result in significantly enhanced magnetoresistance.
Published Version: doi:10.1103/PhysRevB.80.201307
Other Sources: http://www.seas.harvard.edu/venky/pdffiles/PRB201307R.pdf
Terms of Use: This article is made available under the terms and conditions applicable to Open Access Policy Articles, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#OAP
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:4726299

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  • FAS Scholarly Articles [7588]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University
 
 

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