Magnetoresistance in an Asymmetric GaMnAs Resonant Tunneling Diode

Magnetoresistance in an Asymmetric GaMnAs Resonant Tunneling Diode

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Magnetoresistance in an Asymmetric GaMnAs Resonant Tunneling Diode

dc.contributor.author	Likovich, Edward Michael
dc.contributor.author	Russell, Kasey Joe
dc.contributor.author	Yi, Wei
dc.contributor.author	Narayanamurti, Venkatesh
dc.contributor.author	Ku, Keh-Chiang
dc.contributor.author	Zhu, Meng
dc.contributor.author	Samarth, Nitin
dc.date.accessioned	2011-02-16T15:28:15Z
dc.date.issued	2009
dc.identifier.citation	Likovich, Edward M., Kasey J. Russell, Wei Yi, Venkatesh Narayanamurti, Keh-Chiang Ku, Meng Zhu, and Nitin Samarth. 2009. Magnetoresistance in an asymmetric GaMnAs resonant tunneling diode. Physical Review B 80(20): 201307.	en_US
dc.identifier.issn	1098-0121	en_US
dc.identifier.uri	http://nrs.harvard.edu/urn-3:HUL.InstRepos:4726299
dc.description.abstract	In a GaMnAs/AlGaAs resonant tunneling diode (RTD) structure, we observe that both the magnitude and polarity of magnetoresistance are bias dependent when tunneling from a three-dimensional GaMnAs layer through a two-dimensional GaMnAs quantum well. This magnetoresistance behavior results from a shift of negative differential resistance features to higher bias as the relative alignment of the GaMnAs layer magnetizations is changed from parallel to antiparallel. Our observations agree with recent predictions from a theoretical analysis of a similar n-type structure by Ertler and Fabian, and our results suggest that further investigation into ferromagnetic RTD structures may result in significantly enhanced magnetoresistance.	en_US
dc.description.sponsorship	Engineering and Applied Sciences	en_US
dc.language.iso	en_US	en_US
dc.publisher	American Physical Society	en_US
dc.relation.isversionof	doi:10.1103/PhysRevB.80.201307	en_US
dc.relation.hasversion	http://www.seas.harvard.edu/venky/pdffiles/PRB201307R.pdf	en_US
dash.license	OAP
dc.title	Magnetoresistance in an Asymmetric GaMnAs Resonant Tunneling Diode	en_US
dc.type	Journal Article	en_US
dc.description.version	Accepted Manuscript	en_US
dc.relation.journal	Physical Review B	en_US
dash.depositing.author	Narayanamurti, Venkatesh
dc.date.available	2011-02-16T15:28:15Z