Epitaxial Catalyst-Free Growth of InN Nanorods on c-Plane Sapphire

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Epitaxial Catalyst-Free Growth of InN Nanorods on c-Plane Sapphire

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Title: Epitaxial Catalyst-Free Growth of InN Nanorods on c-Plane Sapphire
Author: Shalish, Ilan; Seryogin, G.; Yi, W.; Bao, J. M.; Zimmler, M. A.; Likovich, Edward Michael; Capasso, Federico; Narayanamurti, Venkatesh; Bell, David C.

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Citation: Shalish, Ilan, G. Seryogin, W. Yi, J. M. Bao, M. A. Zimmler, Edward Likovich, David C. Bell, Federico Capasso, and Venkatesh Narayanamurti. 2009. Epitaxial catalyst-free growth of InN nanorods on c-plane sapphire. Nanoscale Research Letters 4(6): 532-537.
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Abstract: We report observation of catalyst-free hydride vapor phase epitaxy growth of InN nanorods. Characterization of the nanorods with transmission electron microscopy, and X-ray diffraction show that the nanorods are stoichiometric 2H–InN single crystals growing in the [0001] orientation. The InN rods are uniform, showing very little variation in both diameter and length. Surprisingly, the rods show clear epitaxial relations with the c-plane sapphire substrate, despite about 29% of lattice mismatch. Comparing catalyst-free with Ni-catalyzed growth, the only difference observed is in the density of nucleation sites, suggesting that Ni does not work like the typical vapor–liquid–solid catalyst, but rather functions as a nucleation promoter by catalyzing the decomposition of ammonia. No conclusive photoluminescence was observed from single nanorods, while integrating over a large area showed weak wide emissions centered at 0.78 and at 1.9 eV.
Published Version: doi://10.1007/s11671-009-9276-z
Other Sources: http://www.ncbi.nlm.nih.gov/pmc/articles/PMC2893868/pdf/
Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:4726300

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