Quantum Hall Conductance of Two-Terminal Graphene Devices

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Quantum Hall Conductance of Two-Terminal Graphene Devices

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Title: Quantum Hall Conductance of Two-Terminal Graphene Devices
Author: Williams, James R.; Abanin, Dmitry A.; DiCarlo, Leonardo; Levitov, Leonid S.; Marcus, Charles Masamed

Note: Order does not necessarily reflect citation order of authors.

Citation: Williams, James R., Dmitry A. Abanin, Leonardo DiCarlo, Leonid S. Levitov, and Charles M. Marcus. 2009. Quantum Hall conductance of two-terminal graphene devices. Physical Review B 80(045408).
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Abstract: Measurement and theory of the two-terminal conductance of monolayer and bilayer graphene in the quantum Hall regime are compared. We examine features of conductance as a function of gate voltage that allow monolayer, bilayer, and gapped samples to be distinguished. In particular, we analyze the distortions of quantum Hall plateaus and the conductance peaks and dips at the charge-neutrality point, which can be used to identify the incompressible densities. These results are compared to recent theory and possible origins of the discrepancy are discussed.
Published Version: doi:10.1103/PhysRevB.80.045408
Other Sources: http://arxiv.org/abs/arxiv:0810.3397
Terms of Use: This article is made available under the terms and conditions applicable to Open Access Policy Articles, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#OAP
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:5110751

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  • FAS Scholarly Articles [7594]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University
 
 

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