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dc.contributor.authorWilliams, James R.
dc.contributor.authorAbanin, Dmitry A.
dc.contributor.authorDiCarlo, Leonardo
dc.contributor.authorLevitov, Leonid S.
dc.contributor.authorMarcus, Charles Masamed
dc.date.accessioned2011-08-15T14:39:32Z
dc.date.issued2009
dc.identifier.citationWilliams, James R., Dmitry A. Abanin, Leonardo DiCarlo, Leonid S. Levitov, and Charles M. Marcus. 2009. Quantum Hall conductance of two-terminal graphene devices. Physical Review B 80(045408).en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:5110751
dc.description.abstractMeasurement and theory of the two-terminal conductance of monolayer and bilayer graphene in the quantum Hall regime are compared. We examine features of conductance as a function of gate voltage that allow monolayer, bilayer, and gapped samples to be distinguished. In particular, we analyze the distortions of quantum Hall plateaus and the conductance peaks and dips at the charge-neutrality point, which can be used to identify the incompressible densities. These results are compared to recent theory and possible origins of the discrepancy are discussed.en_US
dc.description.sponsorshipPhysicsen_US
dc.language.isoen_USen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofdoi:10.1103/PhysRevB.80.045408en_US
dc.relation.hasversionhttp://arxiv.org/abs/arxiv:0810.3397en_US
dash.licenseOAP
dc.subjectbilayer grapheneen_US
dc.subjectBerrys phaseen_US
dc.titleQuantum Hall Conductance of Two-Terminal Graphene Devicesen_US
dc.typeJournal Articleen_US
dc.description.versionAuthor's Originalen_US
dc.relation.journalPhysical Review B Condensed Matter and Materials Physicsen_US
dash.depositing.authorMarcus, Charles Masamed
dc.date.available2011-08-15T14:39:32Z
dc.identifier.doi10.1103/PhysRevB.80.045408*
dash.contributor.affiliatedMarcus, C


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