Atomic Layer Deposition of Tin Monosulfide Thin Films

DSpace/Manakin Repository

Atomic Layer Deposition of Tin Monosulfide Thin Films

Citable link to this page

. . . . . .

Title: Atomic Layer Deposition of Tin Monosulfide Thin Films
Author: Sinsermsuksakul, Prasert; Heo, Jae Yeong; Noh, Wontae; Gordon, Roy Gerald; Hock, Adam S.

Note: Order does not necessarily reflect citation order of authors.

Citation: Sinsermsuksakul, Prasert, Jae Yeong Heo, Wontae Noh, Adam S. Hock, and Roy G. Gordon. 2011. Atomic layer deposition of tin monosulfide thin films. Advanced Energy Materials 1(6): 1116-1125.
Full Text & Related Files:
Abstract: Thin film solar cells made from earth-abundant, non-toxic materials are needed to replace the current technology that uses \(Cu(In,Ga)(S,Se)_2\) and \(CdTe\), which contain scarce and toxic elements. One promising candidate absorber material is tin monosulfide (\(SnS\)). In this report, pure, stoichiometric, single-phase SnS films were obtained by atomic layer deposition (ALD) using the reaction of \(bis(N,N′-diisopropylacetamidinato)tin(II)\) \([Sn(MeC(N-^{i}Pr)_{2})_{2}]\) and hydrogen sulfide \((H_2 S)\) at low temperatures (100 to 200 \(°C\)). The direct optical band gap of SnS is around 1.3 eV and strong optical absorption \((\alpha > 10^4 cm^{−1})\) is observed throughout the visible and near-infrared spectral regions. The films are p-type semiconductors with carrier concentration on the order of \(10^{16} cm^{−3}\) and hole mobility \(0.82–15.3cm^{2}V^{−1}s^{−1}\) in the plane of the films. The electrical properties are anisotropic, with three times higher mobility in the direction through the film, compared to the in-plane direction.
Published Version: doi:10.1002/aenm.201100330
Terms of Use: This article is made available under the terms and conditions applicable to Open Access Policy Articles, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#OAP
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:5366599

Show full Dublin Core record

This item appears in the following Collection(s)

  • FAS Scholarly Articles [6929]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University
 
 

Search DASH


Advanced Search
 
 

Submitters