Atomic Layer Deposition of Tin Monosulfide Thin Films
| Title: | Atomic Layer Deposition of Tin Monosulfide Thin Films |
| Author: |
Sinsermsuksakul, Prasert; Heo, Jae Yeong; Noh, Wontae; Gordon, Roy Gerald; Hock, Adam S.
Note: Order does not necessarily reflect citation order of authors. |
| Citation: | Sinsermsuksakul, Prasert, Jae Yeong Heo, Wontae Noh, Adam S. Hock, and Roy G. Gordon. 2011. Atomic layer deposition of tin monosulfide thin films. Advanced Energy Materials 1(6): 1116-1125. |
| Full Text & Related Files: |
ALD_Tin.pdf (1.429Mb; PDF) 
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| Abstract: | Thin film solar cells made from earth-abundant, non-toxic materials are needed to replace the current technology that uses \(Cu(In,Ga)(S,Se)_2\) and \(CdTe\), which contain scarce and toxic elements. One promising candidate absorber material is tin monosulfide (\(SnS\)). In this report, pure, stoichiometric, single-phase SnS films were obtained by atomic layer deposition (ALD) using the reaction of \(bis(N,N′-diisopropylacetamidinato)tin(II)\) \([Sn(MeC(N-^{i}Pr)_{2})_{2}]\) and hydrogen sulfide \((H_2 S)\) at low temperatures (100 to 200 \(°C\)). The direct optical band gap of SnS is around 1.3 eV and strong optical absorption \((\alpha > 10^4 cm^{−1})\) is observed throughout the visible and near-infrared spectral regions. The films are p-type semiconductors with carrier concentration on the order of \(10^{16} cm^{−3}\) and hole mobility \(0.82–15.3cm^{2}V^{−1}s^{−1}\) in the plane of the films. The electrical properties are anisotropic, with three times higher mobility in the direction through the film, compared to the in-plane direction. |
| Published Version: | doi:10.1002/aenm.201100330 |
| Terms of Use: | This article is made available under the terms and conditions applicable to Open Access Policy Articles, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#OAP |
| Citable link to this page: | http://nrs.harvard.edu/urn-3:HUL.InstRepos:5366599 |
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