# Atomic Layer Deposition of Tin Monosulfide Thin Films

 Title: Atomic Layer Deposition of Tin Monosulfide Thin Films Author: Sinsermsuksakul, Prasert; Heo, Jae Yeong; Noh, Wontae; Gordon, Roy Gerald; Hock, Adam S. Note: Order does not necessarily reflect citation order of authors. Citation: Sinsermsuksakul, Prasert, Jae Yeong Heo, Wontae Noh, Adam S. Hock, and Roy G. Gordon. 2011. Atomic layer deposition of tin monosulfide thin films. Advanced Energy Materials 1(6): 1116-1125. Full Text & Related Files: ALD_Tin.pdf (1.429Mb; PDF) Abstract: Thin film solar cells made from earth-abundant, non-toxic materials are needed to replace the current technology that uses $$Cu(In,Ga)(S,Se)_2$$ and $$CdTe$$, which contain scarce and toxic elements. One promising candidate absorber material is tin monosulfide ($$SnS$$). In this report, pure, stoichiometric, single-phase SnS films were obtained by atomic layer deposition (ALD) using the reaction of $$bis(N,N′-diisopropylacetamidinato)tin(II)$$ $$[Sn(MeC(N-^{i}Pr)_{2})_{2}]$$ and hydrogen sulfide $$(H_2 S)$$ at low temperatures (100 to 200 $$°C$$). The direct optical band gap of SnS is around 1.3 eV and strong optical absorption $$(\alpha > 10^4 cm^{−1})$$ is observed throughout the visible and near-infrared spectral regions. The films are p-type semiconductors with carrier concentration on the order of $$10^{16} cm^{−3}$$ and hole mobility $$0.82–15.3cm^{2}V^{−1}s^{−1}$$ in the plane of the films. The electrical properties are anisotropic, with three times higher mobility in the direction through the film, compared to the in-plane direction. Published Version: doi:10.1002/aenm.201100330 Terms of Use: This article is made available under the terms and conditions applicable to Open Access Policy Articles, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#OAP Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:5366599