Atomic Layer Deposition of Tin Monosulfide Thin Films

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Atomic Layer Deposition of Tin Monosulfide Thin Films

Show simple item record Sinsermsuksakul, Prasert Heo, Jae Yeong Noh, Wontae Gordon, Roy Gerald Hock, Adam S. 2011-12-09T18:18:35Z 2011
dc.identifier.citation Sinsermsuksakul, Prasert, Jae Yeong Heo, Wontae Noh, Adam S. Hock, and Roy G. Gordon. 2011. Atomic layer deposition of tin monosulfide thin films. Advanced Energy Materials 1(6): 1116-1125. en_US
dc.identifier.issn 1614-6832 en_US
dc.identifier.issn 1614-6840 en_US
dc.description.abstract Thin film solar cells made from earth-abundant, non-toxic materials are needed to replace the current technology that uses \(Cu(In,Ga)(S,Se)_2\) and \(CdTe\), which contain scarce and toxic elements. One promising candidate absorber material is tin monosulfide (\(SnS\)). In this report, pure, stoichiometric, single-phase SnS films were obtained by atomic layer deposition (ALD) using the reaction of \(bis(N,N′-diisopropylacetamidinato)tin(II)\) \([Sn(MeC(N-^{i}Pr)_{2})_{2}]\) and hydrogen sulfide \((H_2 S)\) at low temperatures (100 to 200 \(°C\)). The direct optical band gap of SnS is around 1.3 eV and strong optical absorption \((\alpha > 10^4 cm^{−1})\) is observed throughout the visible and near-infrared spectral regions. The films are p-type semiconductors with carrier concentration on the order of \(10^{16} cm^{−3}\) and hole mobility \(0.82–15.3cm^{2}V^{−1}s^{−1}\) in the plane of the films. The electrical properties are anisotropic, with three times higher mobility in the direction through the film, compared to the in-plane direction. en_US
dc.description.sponsorship Chemistry and Chemical Biology en_US
dc.language.iso en_US en_US
dc.publisher Wiley-VCH en_US
dc.relation.isversionof doi:10.1002/aenm.201100330 en_US
dash.license OAP
dc.subject atomic layer deposition en_US
dc.subject electro-optical materials en_US
dc.subject photovoltaic materials en_US
dc.subject thin films en_US
dc.title Atomic Layer Deposition of Tin Monosulfide Thin Films en_US
dc.type Journal Article en_US
dc.description.version Accepted Manuscript en_US
dc.relation.journal Advanced Energy Materials en_US Gordon, Roy Gerald 2011-12-09T18:18:35Z

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