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dc.contributor.author	Sinsermsuksakul, Prasert
dc.contributor.author	Heo, Jae Yeong
dc.contributor.author	Noh, Wontae
dc.contributor.author	Gordon, Roy Gerald
dc.contributor.author	Hock, Adam S.
dc.date.accessioned	2011-12-09T18:18:35Z
dc.date.issued	2011
dc.identifier.citation	Sinsermsuksakul, Prasert, Jae Yeong Heo, Wontae Noh, Adam S. Hock, and Roy G. Gordon. 2011. Atomic layer deposition of tin monosulfide thin films. Advanced Energy Materials 1(6): 1116-1125.	en_US
dc.identifier.issn	1614-6832	en_US
dc.identifier.issn	1614-6840	en_US
dc.identifier.uri	http://nrs.harvard.edu/urn-3:HUL.InstRepos:5366599
dc.description.abstract	Thin film solar cells made from earth-abundant, non-toxic materials are needed to replace the current technology that uses \(Cu(In,Ga)(S,Se)_2\) and \(CdTe\), which contain scarce and toxic elements. One promising candidate absorber material is tin monosulfide (\(SnS\)). In this report, pure, stoichiometric, single-phase SnS films were obtained by atomic layer deposition (ALD) using the reaction of \(bis(N,N′-diisopropylacetamidinato)tin(II)\) \([Sn(MeC(N-^{i}Pr)_{2})_{2}]\) and hydrogen sulfide \((H_2 S)\) at low temperatures (100 to 200 \(°C\)). The direct optical band gap of SnS is around 1.3 eV and strong optical absorption \((\alpha > 10^4 cm^{−1})\) is observed throughout the visible and near-infrared spectral regions. The films are p-type semiconductors with carrier concentration on the order of \(10^{16} cm^{−3}\) and hole mobility \(0.82–15.3cm^{2}V^{−1}s^{−1}\) in the plane of the films. The electrical properties are anisotropic, with three times higher mobility in the direction through the film, compared to the in-plane direction.	en_US
dc.description.sponsorship	Chemistry and Chemical Biology	en_US
dc.language.iso	en_US	en_US
dc.publisher	Wiley-VCH	en_US
dc.relation.isversionof	doi:10.1002/aenm.201100330	en_US
dash.license	OAP
dc.subject	atomic layer deposition	en_US
dc.subject	electro-optical materials	en_US
dc.subject	photovoltaic materials	en_US
dc.subject	thin films	en_US
dc.title	Atomic Layer Deposition of Tin Monosulfide Thin Films	en_US
dc.type	Journal Article	en_US
dc.description.version	Accepted Manuscript	en_US
dc.relation.journal	Advanced Energy Materials	en_US
dash.depositing.author	Gordon, Roy Gerald
dc.date.available	2011-12-09T18:18:35Z

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