Atomic Layer Deposition of Tin Monosulfide Thin Films

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Atomic Layer Deposition of Tin Monosulfide Thin Films

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dc.contributor.author Sinsermsuksakul, Prasert
dc.contributor.author Heo, Jae Yeong
dc.contributor.author Noh, Wontae
dc.contributor.author Gordon, Roy Gerald
dc.contributor.author Hock, Adam S.
dc.date.accessioned 2011-12-09T18:18:35Z
dc.date.issued 2011
dc.identifier.citation Sinsermsuksakul, Prasert, Jae Yeong Heo, Wontae Noh, Adam S. Hock, and Roy G. Gordon. 2011. Atomic layer deposition of tin monosulfide thin films. Advanced Energy Materials 1(6): 1116-1125. en_US
dc.identifier.issn 1614-6832 en_US
dc.identifier.issn 1614-6840 en_US
dc.identifier.uri http://nrs.harvard.edu/urn-3:HUL.InstRepos:5366599
dc.description.abstract Thin film solar cells made from earth-abundant, non-toxic materials are needed to replace the current technology that uses \(Cu(In,Ga)(S,Se)_2\) and \(CdTe\), which contain scarce and toxic elements. One promising candidate absorber material is tin monosulfide (\(SnS\)). In this report, pure, stoichiometric, single-phase SnS films were obtained by atomic layer deposition (ALD) using the reaction of \(bis(N,N′-diisopropylacetamidinato)tin(II)\) \([Sn(MeC(N-^{i}Pr)_{2})_{2}]\) and hydrogen sulfide \((H_2 S)\) at low temperatures (100 to 200 \(°C\)). The direct optical band gap of SnS is around 1.3 eV and strong optical absorption \((\alpha > 10^4 cm^{−1})\) is observed throughout the visible and near-infrared spectral regions. The films are p-type semiconductors with carrier concentration on the order of \(10^{16} cm^{−3}\) and hole mobility \(0.82–15.3cm^{2}V^{−1}s^{−1}\) in the plane of the films. The electrical properties are anisotropic, with three times higher mobility in the direction through the film, compared to the in-plane direction. en_US
dc.description.sponsorship Chemistry and Chemical Biology en_US
dc.language.iso en_US en_US
dc.publisher Wiley-VCH en_US
dc.relation.isversionof doi:10.1002/aenm.201100330 en_US
dash.license OAP
dc.subject atomic layer deposition en_US
dc.subject electro-optical materials en_US
dc.subject photovoltaic materials en_US
dc.subject thin films en_US
dc.title Atomic Layer Deposition of Tin Monosulfide Thin Films en_US
dc.type Journal Article en_US
dc.description.version Accepted Manuscript en_US
dc.relation.journal Advanced Energy Materials en_US
dash.depositing.author Gordon, Roy Gerald
dc.date.available 2011-12-09T18:18:35Z

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  • FAS Scholarly Articles [6868]
    Peer reviewed scholarly articles from the Faculty of Arts and Sciences of Harvard University

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